current
參數(shù)資料
型號: S9S08LG32J0VLH
廠商: Freescale Semiconductor
文件頁數(shù): 6/50頁
文件大小: 0K
描述: IC MCU 8BIT 32KB FLASH 64LQFP
標(biāo)準(zhǔn)包裝: 160
系列: S08
核心處理器: S08
芯體尺寸: 8-位
速度: 40MHz
連通性: I²C,LIN,SCI,SPI
外圍設(shè)備: LCD,LVD,POR,PWM,WDT
輸入/輸出數(shù): 53
程序存儲器容量: 32KB(32K x 8)
程序存儲器類型: 閃存
RAM 容量: 1.9K x 8
電壓 - 電源 (Vcc/Vdd): 2.7 V ~ 5.5 V
數(shù)據(jù)轉(zhuǎn)換器: A/D 12x12b
振蕩器型: 內(nèi)部
工作溫度: -40°C ~ 105°C
封裝/外殼: 64-LQFP
包裝: 托盤
MC9S08LG32 Series Data Sheet, Rev. 9
Electrical Characteristics
Freescale Semiconductor
14
D DC injection
current 5, 6, 7
VIN < VSS, VIN >
VDD
Single pin limit
IIC
——
2
mA
Total MCU limit, includes sum of
all stressed pins
——
25
mA
15
C Input Capacitance, all non-supply pins
CIn
——
8
pF
16
C RAM retention voltage
VRAM
2—
V
17
P POR rearm voltage
VPOR
0.9
1.4
2.0
V
18
D POR rearm time
tPOR
10
s
19
P Low-voltage detection threshold — high range
VDD falling
VDD rising
VLVD1
3.9
4.0
4.1
4.2
V
20
P Low-voltage detection threshold — low range
VDD falling
VDD rising
VLVD0
2.48
2.54
2.56
2.62
2.64
2.70
V
21
P Low-voltage warning threshold — high range 1
VDD falling
VDD rising
VLVW3
4.5
4.6
4.7
4.8
V
22
P Low-voltage warning threshold — high range 0
VDD falling
VDD rising
VLVW2
4.2
4.3
4.4
4.5
V
23
P Low-voltage warning threshold — low range 1
VDD falling
VDD rising
VLVW1
2.84
2.90
2.92
2.98
3.00
3.06
V
24
P Low-voltage warning threshold — low range 0
VDD falling
VDD rising
VLVW0
2.66
2.72
2.74
2.80
2.82
2.88
V
25
P Low-voltage inhibit reset/recover hysteresis
5 V
3 V
Vhys
100
60
—mV
1 Typical values are measured at 25
C. Characterized, not tested
2 Measured with VIn = VDD or VSS.
3 Measured with VIn = VSS.
4 Measured with VIn = VDD.
5 All functional non-supply pins, except for PTC6 are internally clamped to V
SS and VDD.
6 Input must be current limited to the value specified. To determine the value of the required current-limiting resistor, calculate
resistance values for positive and negative clamp voltages, then use the larger of the two values.
7 Power supply must maintain regulation within operating V
DD range during instantaneous and operating maximum current
conditions. If the positive injection current (VIn > VDD) is greater than IDD, the injection current may flow out of VDD and could
result in external power supply going out of regulation. Ensure that external VDD load will shunt current greater than maximum
injection current. This will be the greatest risk when the MCU is not consuming power. For instance, if no system clock is
present, or if clock rate is very low (which would reduce overall power consumption).
Table 8. DC Characteristics (continued)
Num C
Characteristic
Symbol
Min
Typ1
Max
Unit
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