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參數(shù)資料
| 型號： | S9979 |
| 廠商： | Hamamatsu Photonics |
| 英文描述： | CCD area image sensor TDI operation / large active area CCD |
| 中文描述： | 防治荒漠化領(lǐng)域的圖像傳感器TDI的操作/大型活動區(qū)域防治荒漠化公約 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 157K |
| 代理商： | S9979 |
CCD area image sensor
S9979
2
I
Absolute maximum ratings (Ta=25 °C)
Parameter
Operating temperature
Storage temperature
OD voltage
RD voltage
ISV voltage
IGV voltage
IGH voltage
SG voltage
OG voltage
RG voltage
TG voltage
Symbol
Topr
Tstg
V
OD
V
RD
V
ISV
V
IGV
V
IGH
V
SG
V
OG
V
RG
V
TG
V
P1AV
, V
P2AV
V
P1BV
, V
P2BV
V
P1AH
, V
P2AH
V
P1BH
, V
P2BH
Min.
-
30
Typ.
-
-
-
-
-
-
-
-
-
-
-
Max.
+30
+70
+20
+18
+18
+15
+15
+15
+15
+15
+15
Unit
°C
°C
V
V
V
V
V
V
V
V
V
-0.5
-0.5
-0.5
-15
-15
-15
-15
-15
-15
Vertical clock voltage
-15
-
+15
V
Horizontal clock voltage
-15
-
+15
V
I
Operating conditions (MPP mode, Ta=25 °C)
Parameter
Output transistor drain voltage
Reset drain voltage
Output gate voltage
Output transistor ground voltage
Substrate voltage
Vertical input source
Vertical input gate
Test point
Horizontal input gate
Symbol
V
OD
V
RD
V
OG
V
SSA
V
SSD
V
ISV
V
IGV
V
IGH
Min.
12
12
-0.5
-
-5
-
-8
-8
Typ.
15
13
2
0
0
V
RD
0
0
Max.
-
14
5
-
-
-
-
-
Unit
V
V
V
V
V
V
High
V
P1AVH
, V
P2AVH
V
P1BVH
, V
P2BVH
V
P1AVL
, V
P2AVL
V
P1BVL
, V
P2BVL
V
P1AHH
, V
P2AHH
V
P1BHH
, V
P2BHH
V
P1AHL
, V
P2AHL
V
P1BHL
, V
P2BHL
V
SGH
V
SGL
V
RGH
V
RGL
V
TGH
V
TGL
0
3
6
Vertical shift register
clock voltage
Low
-9
-8
-7
V
High
0
3
6
Horizontal shift register
clock voltage
Low
-9
-8
-7
V
High
Low
High
Low
High
Low
0
-9
0
-9
0
-9
3
-8
3
-8
3
-8
6
-7
6
-7
6
-7
Summing gate voltage
V
Reset gate voltage
V
Transfer gate voltage
V
I
Electrical characteristics (Ta=25 °C)
Parameter
Signal output frequency
Reset clock frequency
Symbol
fc
frg
C
P1AV
, C
P2AV
C
P1BV,
C
P2BV
C
P1AH
, C
P2AH
C
P1BH
, C
P2BH
C
SG
C
RG
C
TG
CTE
Vout
Zo
P
Remark
Min.
-
-
Typ.
2
2
Max.
4
4
Unit
MHz
MHz
Vertical shift register capacitance
-
15000
-
pF
Horizontal shift register capacitance
-
500
-
pF
Summing gate capacitance
Reset gate capacitance
Transfer gate capacitance
Transfer efficiency
DC output level
Output impedance
Power dissipation
*2: Measured at half of the full well capacity. CTE is defined per pixel.
*3: V
OD
=15 V
*4: Power dissipation of the on-chip amplifier
-
-
-
-
15
10
500
-
-
-
-
pF
pF
pF
*
2
*
3
*
3
*
3,
*
4
0.99995
5
-
-
0.99999
8
500
60
11
-
-
V
mW
-
30
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| S9979_11 | 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:CCD area image sensor TDI operation / large active area CCD |
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