
S952T/S952TR/S952TRW
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
2 (6)
Rev. 3, 20-Jan-99
Document Number 85062
Absolute Maximum Ratings
T
amb
= 25 C, unless otherwise specified
Parameter
Drain - source voltage
Drain current
Gate 1/Gate 2 - source peak current
Gate 1/Gate 2 - source voltage
Total power dissipation
Channel temperature
Storage temperature range
Test Conditions
Symbol
V
DS
I
D
±
I
G1/G2SM
±
V
G1/G2SM
P
tot
T
Ch
T
stg
Value
12
30
10
6
200
150
Unit
V
mA
mA
V
mW
C
C
T
amb
≤
60 C
–55 to +150
Maximum Thermal Resistance
T
amb
= 25 C, unless otherwise specified
Parameter
Channel ambient
on glass fibre printed board (25 x 20 x 1.5) mm
3
plated with 35 m Cu
Test Conditions
Symbol
R
thChA
Value
450
Unit
K/W
Electrical DC Characteristics
T
amb
= 25 C, unless otherwise specified
Parameter
Drain - source
breakdown voltage
Gate 1 - source
breakdown voltage
Gate 2 - source
breakdown voltage
Gate 1 - source
leakage current
Gate 2 - source
leakage current
Drain - source
operating current
Gate 1 - source
cut-off voltage
Gate 2 - source
cut-off voltage
Test Conditions
Symbol
±
V
(BR)DSS
Min
15
Typ
Max Unit
±
I
G1S
= 10 A, V
G2S
= V
G1S
= 0
V
±
I
G1S
= 10 mA, V
G2S
= V
DS
= 0
±
V
(BR)G1SS
7
10
V
±
I
G2S
= 10 mA, V
G1S
= V
DS
= 0
±
V
(BR)G2SS
7
10
V
+V
G1S
= 5 V, V
G2S
= V
DS
= 0
+I
G1SS
20
nA
±
V
G2S
= 5 V, V
G1S
= V
DS
= 0
±
I
G2SS
20
nA
V
DS
= V
RG1
= 9 V, V
G2S
= 4 V, R
G1
= 390 k
I
DSO
7
10
14
mA
V
DS
= V
RG1
= 9 V, V
G2S
= 4 V, I
D
= 100 A
V
G1S(OFF)
0.4
1.2
V
V
DS
= V
RG1
= 9 V, R
G1
= 390 k , I
D
= 100 A
V
G2S(OFF)
1.0
V
Remark on improving intermodulation behavior:
By setting R
G1
= 300 k instead of 390 k , typical value of I
DSO
will raise up to about 15 mA and improved inter-
modulation behavior will be performed.