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參數(shù)資料
| 型號： | S9345 |
| 廠商： | Hamamatsu Photonics |
| 英文描述： | Si PIN photodiode Dual-element photodiode using newly developed small, thin package |
| 中文描述： | 硅PIN光電二極管的雙元光電二極管使用新開發(fā)的小型，超薄型封裝 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 99K |
| 代理商： | S9345 |
P H O T O D I O D E
Si PIN photodiode
S9345
Dual-element photodiode using newly developed small, thin package
S9345 is a dual-element Si PIN photodiode employing a newly developed small, thin plastic package. The cubic volume reduced to one-
fifth that of similar type photodiodes using conventional package. In order to extend the detection area when used as a reflection-mode
optical switch, the entire photodiode active area of 1.5 mm wide and 5.6 mm long is asymmetrically segmented into 2 longitudinal sections
of 1.5 mm and 4.1 mm.
Features
Applications
l
Miniature and thin plastic package: 3.4 × 7.0 × 0.95
t
mm
l
Surface mounting type
l
Asymmetrical dual-element PIN photodiode
l
Active area
Photodiode a: 1.5 × 1.5 mm
Photodiode b: 1.5 × 4.1 mm
l
High sensitivity
l
Optical switch
1
I
Absolute maximum ratings (Ta=25
°
C)
Parameter
Maximum reverse voltage
Operating temperature
Storage temperature
Symbol
V
R
Max.
Topr
Tstg
Value
20
-25 to +85
-40 to +100
Unit
V
°C
°C
I
Electrical and optical characteristics (Ta=25 °C, per 1 element)
Parameter
Spectral response range
Peak sensitivity wavelength
Photo sensitivity
Photodiode a
Short circuit
current
Photodiode b
Dark current
Photodiode a
Terminal
capacitance Photodiode b
Symbol
λ
λ
p
S
Condition
Min.
-
-
0.5
-
-
-
-
-
Typ.
Max.
-
-
-
-
-
5
8
20
Unit
nm
nm
A/W
320 to 1100
960
0.55
2.6
7.1
0.4
4
10
λ
=780 nm
V
R
=0 V, 2856 K,
100
lx
V
R
=10 V, all elements
Isc
μA
I
D
nA
Ct
V
R
=10 V, f=1 MHz
pF
Cut-off frequency
fc
V
R
=10 V, R
L
=50
λ
=780 nm, -3 dB
7
15
-
MHz
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