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參數(shù)資料
| 型號： | S8DNF3LL |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | Dual N-channel 30V - 0.017OHM - 8A SO-8 Low gate charge STripFET TM II Power MOSFET |
| 中文描述： | 雙N通道30V的- 0.017OHM - 8A條的SO - 8低柵極電荷STripFET商標(biāo)二功率MOSFET |
| 文件頁數(shù)： | 4/12頁 |
| 文件大?。?/td> | 298K |
| 代理商： | S8DNF3LL |
Electrical characteristics
STS8DNF3LL
4/12
2
Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 3.
Table 4.
Table 5.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown voltage
I
D
= 250 μA, V
GS
= 0
30
V
I
DSS
Zero gate voltage
Drain current (V
GS
= 0)
V
DS
= Max rating
1
μA
V
DS
=Max rating,
T
C
=125°C
10
μA
I
GSS
Gate-body leakage
current (V
DS
= 0)
V
GS
= ± 16V
±100
nA
V
GS(th)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 250μA
1
V
R
DS(on)
Static drain-source on
resistance
V
GS
= 10V, I
D
= 4A
V
GS
= 4.5V, I
D
= 4A
0.017
0.020
0.020
0.024
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
g
fs (1)
1.
Pulsed: Pulse duration = 300 μs, duty cycle 1.5.
Forward transconductance
V
DS
= 15V, I
D
= 4 A
12.5
S
C
iss
Input capacitance
V
DS
= 25V, f = 1 MHz,
V
GS
= 0
800
pF
C
oss
Output capacitance
250
pF
C
rss
Reverse transfer
capacitance
60
pF
Q
g
Total gate charge
V
DD
= 15V, I
D
= 8A,
V
GS
= 5V
(see Figure 14)
12.5
17
nC
Q
gs
Gate-source charge
3.2
nC
Q
gd
Gate-drain charge
4.5
nC
Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on delay time
Rise time
V
DD
=15 V, I
D
=4A,
R
G
=4.7
,
V
GS
= 4.5V
(see Figure 13)
18
32
ns
ns
t
d(off)
t
f
Turn-off Delay Time
Fall Time
V
DD
=15 V, I
D
=4A,
R
G
=4.7
,
V
GS
= 4.5V
(see Figure 13)
21
11
ns
ns
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