參數(shù)資料
型號(hào)： S8785
元件分類： 光電元器件
英文描述： LINEAR OUTPUT PHOTO DETECTOR
封裝： HERMETIC SEALED PACKAGE-12
文件頁(yè)數(shù)： 1/4頁(yè)
文件大小： 87K
代理商： S8785
S8785 series is a thermoelectrically cooled Si photodiode with preamp developed for low-light-level detection. A large area photodiode, op amp,
TE-cooler and feedback resistor (10 G
) are integrated into a single package. A thermistor is also included in the same package for temperature
control so that the photodiode and I-V conversion circuit can be cooled for stable operation. S8785 series also features low noise and low NEP,
and is especially suitable for NOx detection.
Features
l Large active area size: 10 × 10 mm
l UV to NIR Si photodiode optimized for precision photometry
l Compact hermetic package with sapphire window
l High precision FET input operational amplifier
l High gain: Rf=10 G
l Low noise and NEP
l High cooling efficiency
S8785
:
T=50 C
S8785-01:
T=30 C
l High stability with thermistor
Applications
l NOx detection
l Low-light-level measurement
PHOTODIODE
Si photodiode with preamp
Large area photodiode integrated with op amp and TE-cooler
S8785 series
S8785 series may be damaged by Electro Static Discharge, etc. Please see Precautions for use in the last page.
s Absolute maximum ratings
s Recommended operating conditions
Parameter
Symbol
Value
Parameter
Symbol
Value
Supply voltage (preamp)
Vcc
±20 V
Supply voltage (preamp)
Vcc
±5 to ±15 V
Operating temperature
Topr
-30 to +60
°C
TE-cooler current
Ite
0.8 A Max.
Storage temperature
Tstg
-40 to +80
°C
Thermistor power dissipation
Pth
0.03 mW Max.
O p erating te m p erature (photodio d e)
Tdopr
-30 to +60
°C
Load resistance
RL
100 k
Min.
TE-cooler allowable voltage *
1
Vte
5 V *
2
TE-cooler allowable current
Ite
1 A
Thermistor power dissipation
Pth
0.2 mW
*1: Max ripple: 10 %
*2: S8785-01: 3.7 V
s Electrical and optical characteristics (Typ. Vcc=±15 V, RL=1 M
)
S8785
S8785-01
Parameter
Symbol
Condition
T= -25
°C
T= -5
°C
Unit
Spectral response range
λ
190 to 1100
nm
Peak sensitivity wavelength
λp
960
nm
Feedback resistance
Rf
10
G
λ=200 nm
-0.9
Photo sensitivity
S
λ=λp
-5.1
V/nW
Output noise voltage
Vn
D ark state, f= 10 H z
20
25
Vrms/Hz
1/2
Noise equivalent power
NEP
λ=λp, f=10 Hz
4
5
fW/Hz
1/2
Output offset voltage
Vos
Dark state
±2
mV
Cut-off frequency
fc
-3 dB
190
180
Hz
Output voltage swing
Vo
-13
V
Supply current
Icc
Dark state
0.3
mA
Thermistor resistance
Rth
86
30
k
1
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