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參數(shù)資料
| 型號： | S868T |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | BIPMIC - Cascadable Silicon Bipolar Amplifier |
| 中文描述： | BIPMIC -硅雙極放大器級聯(lián) |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 82K |
| 代理商： | S868T |
S868T
Vishay
Semiconductors
www.vishay.com
Rev. 3, 20-Jan-99
1 (3)
Document Number 85056
BIPMIC
– Cascadable Silicon Bipolar Amplifier
Electrostatic sensitive device.
Observe precautions for handling.
Applications
General purpose 50 gain block for narrow and broad
band IF and RF amplifiers in commercial and industrial
applications. The 50 level allows directly to cascade
this amplifier with minimal external circuitry, thus pro-
viding a simple, cost effective way to achieve high level
amplification.
Features
Broadband amplification
50 cascadable gain block
High gain (19 dB @900 MHz)
Low noise figure (2.9 db @900 Mhz)
High output level
Low cost surface mount plastic package
Few external components
13 579
2
1
4
3
94 9279
S868T Marking: 868
Plastic case (SOT 143)
1 = RF-output, 2 = Ground,
3 = RF-input, 4 = Ground
Typical biasing configuration
Absolute Maximum Ratings
T
amb
= 25 C, unless otherwise specified
Parameter
Device current
RF input power
Total power dissipation
Junction temperature
Storage temperature range
Test Conditions
Symbol
I
bias
P
in
P
tot
T
j
T
stg
Value
55
20
275
150
Unit
mA
dBm
mW
C
C
T
amb
≤
25 C
–65 to +150
Maximum Thermal Resistance
T
amb
= 25 C, unless otherwise specified
Parameter
Junction ambient
on glass fibre printed board (25 x 20 x 1.5) mm
3
plated with 35 m Cu
Test Conditions
Symbol
R
thJA
Value
450
Unit
K/W
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