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參數(shù)資料
| 型號： | S8664-50K |
| 廠商： | Hamamatsu Photonics |
| 英文描述： | Short wavelength type APD |
| 中文描述： | APD的短波類型 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 113K |
| 代理商： | S8664-50K |
Si APD
S8664 series
2
I
Spectral response
I
Quantum efficiency vs. wavelength
I
Dark current vs. reverse voltage
I
Gain vs. reverse voltage
KAPDB0073EB
KAPDB0074EB
KAPDB0075EB
KAPDB0076EB
10
25
20
15
0
200
5
P
(Typ. M=50)
WAVELENGTH (nm)
400
600
800
1000
1200
S8664-02K/-05K/-10K/
-20K/-30K/-50K
S8664-55/-1010
40
100
80
60
0
200
20
Q
WAVELENGTH (nm)
400
600
800
1000
1200
(Typ. Ta=25 C)
S8664-02K/-05K/-10K/
-20K/-30K/-50K
S8664-55/-1010
1 nA
1 μA
(Typ. Ta=25
C)
100 nA
1 pA
10 pA
10 nA
100 pA
D
REVERSE VOLTAGE (V)
100
200
300
400
500
S8664-50K
S8664-30K
S8664-10K
S8664-02K
S8664-1010
S8664-55
1000
(Typ.
λ
=420 nm)
1
200
100
10
G
REVERSE VOLTAGE (V)
300
400
500
-20
C
0
C
20
C
40
C
60
C
I
Terminal capacitance vs. reverse voltage
KAPDB0077EB
10 nF
(Typ. Ta=25
C, f=10 kHz)
1 nF
100 fF
100 pF
10 pF
1 pF
T
REVERSE VOLTAGE (V)
0
100
200
300
400
500
S8664-30K
S8664-55
S8664-10K
S8664-02K
S8664-50K
S8664-1010
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S8664-55 | Short wavelength type APD |
| S8665-0909 | CCD area image sensor Four-stage thermoelectric cooled, back-thinned FFT-CCD |
| S8673 | One-dimensional PSD using SIP (Single Inline Package) |
| S8703 | Si PIN photodiode Dual-element, plastic package photodiode |
| S8745-01 | Photodiode and preamp integrated with feedback resistance and capacitance |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S8664-55 | 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:Short wavelength type APD |
| S8664C-2600 | 制造商:Elan 功能描述:TOUCH PAD |
| S8665-0909 | 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:CCD area image sensor Four-stage thermoelectric cooled, back-thinned FFT-CCD |
| S8673 | 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:One-dimensional PSD using SIP (Single Inline Package) |
| S8677 | 制造商:BOTHHAND 制造商全稱:Bothhand USA, LP. 功能描述:T1/CEPT/ISDN-PRI TRANSFORMERS |
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