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參數(shù)資料
| 型號(hào)： | S8558 |
| 廠商： | Hamamatsu Photonics |
| 英文描述： | Surface mountable 16-element photodiode array |
| 中文描述： | 表面貼裝16元光電二極管陣列 |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大?。?/td> | 114K |
| 代理商： | S8558 |
Si PIN photodiode array
S8558
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho,
Higashi-ku,
Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesv
gen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 200
6
Hamamatsu Photonics K.K.
Cat. No. KMPD1062E01
Aug. 2006
DN
I
Dimensional outline (unit: mm)
KMPDA0144EA
0
200
0.2
0.4
0.8
0.7
0.5
0.3
0.1
400
600
800
1200
1000
WAVELENGTH
(nm)
P
(Typ. Ta=25 C)
0.6
QE=100 %
1 pA
10 pA
100 pA
1 nA
0.01
0.1
1
10
100
REVERSE VOLTAGE (V)
D
(Typ. Ta=25
C)
1 pF
10 pF
100 pF
1 nF
0.1
1
10
100
REVERSE VOLTAGE (V)
T
(Typ. Ta=25
C)
1 MHz
10 MHz
100 MHz
1
10
100
REVERSE VOLTAGE (V)
C
(Typ. Ta=25
C,
λ
=830 nm, R
L
=50
)
P 0.8
×
15 = 12.0
P 1.27
×
8 = 10.16
0.6
4
2
2
6
13.70
15.35
0.4
0.7
×
2.0 (
×
16 ELEMENTS)
ACTIVE AREA
(R0.15)
(R0.25)
0.4
Tolerance unless otherwise
noted: ±0.25
Chip position accuracy with
respect to the package center
X, Y
≤
±0.3
CH1
CH16
1
3
5
7
9
11
13
15
KC
16
14
12
10
8
6
4
2
NC
(
1
SILICONE RESIN
PHOTOSENSITIVE
I
Dark current vs. reverse voltage
I
Spectral response
KMPDB0193EA
KMPDB0194EA
I
Terminal capacitance vs. reverse voltage
I
Cut-off frequency vs. reverse voltage
KMPDB0195EA
KMPDB0196EA
2
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