- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄373356 > S8553 (Hamamatsu Photonics) Photodiodes for VUV (Vacuum UV) detection PDF資料下載
參數(shù)資料
| 型號： | S8553 |
| 廠商： | Hamamatsu Photonics |
| 英文描述： | Photodiodes for VUV (Vacuum UV) detection |
| 中文描述： | 光電二極管的真空紫外（真空紫外）檢測 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 116K |
| 代理商： | S8553 |
S8551, S8552 and S8553 are VUV (Vacuum UV) photodiodes suitable for detection of ArF excimer lasers (
λ
=193 nm). Designed to provide
optimal performance in the VUV range, these photodiodes offer more stable sensitivity even after long exposure to VUV radiation compared with
conventional types.
Features
l
Reliable detection improves of ArF excimer laser
(
λ
=193 nm)
l
Large active area
S8551: 5.8 × 5.8 mm
S8552: 10 × 10 mm
S8553: 18 × 18 mm
l
Windowless package
S8551: TO-8 metal package
S8552: 16.5 × 15.0 mm ceramic package
S8553: 25.5 × 25.5 mm ceramic package
Applications
l
ArF excimer laser detection
l
Detection of various UV light sources
P H O T O D I O D E
Si photodiode
S8551, S8552, S8553
Photodiodes for VUV (Vacuum UV) detection
1
I
Absolute maximum ratings (Ta=25
°
C)
Parameter
Reverse voltage
Operating temperature
Storage temperature
* No condensation
Symbol
V
R
Max.
Topr
Tstg
Value
5
Unit
V
°
C
°
C
-20 to +60 *
-55 to +80 *
I
Electrical and optical characteristics (Ta=25
°
C)
S8551
Typ.
60
0.02
S8552
Typ.
60
0.05
S8553
Typ.
60
0.1
Parameter
Symbol
Condition
Min.
45
-
Max.
-
0.5
Min.
45
-
Max.
-
1.0
Min.
45
-
Max.
-
5.0
Unit
Photo sensitivity
Dark current
Terminal
capacitance
S
I
D
λ
=193 nm
V
R
=10 mV
mA/W
nA
Ct
V
R
=0 V, f=10 kHz
-
1.0
-
-
4.0
-
-
8.0
-
nF
Rise time
tr
V
R
=0 V, R
L
=1 k
10 to 90 %
-
2
-
-
9
-
-
18
-
μs
S8551, S8552 and S8553 use windowless packages with no protection on the photodiode chip. Always use the following
precautions when handling these photodiodes.
I
Handling precautions
G
Handle the photodiodes in a clean room.
G
Never touch the photodiode chip surface and wire bonding.
G
Wear dust-proof gloves and dust-proof mask.
G
Use an air dust cleaner to blow away dust and foreign matter on the photodiode chip surface.
G
Do not clean the photodiodes by any method other than air blow.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S8558 | Surface mountable 16-element photodiode array |
| S8559 | Si photodiode Detector for X-ray monitor |
| S8594 | Quadrant photodiode with slit mask for encoder |
| S8611 | Si APD Low bias operation, for 800 nm band |
| S8627-01A | Transmitter/receiver photo IC for optical link |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S8558 | 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:Surface mountable 16-element photodiode array |
| S8559 | 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:Si photodiode Detector for X-ray monitor |
| S8-56R-Q | 功能描述:端子 Tubular Ring Terminal, non-insulated, 8 RoHS:否 制造商:AVX 產(chǎn)品:Junction Box - Wire to Wire 系列:9826 線規(guī):26-18 接線柱/接頭大小: 絕緣: 顏色:Red 型式:Female 觸點電鍍:Tin over Nickel 觸點材料:Beryllium Copper, Phosphor Bronze 端接類型:Crimp |
| S8-56R-T | 功能描述:端子 #8 5/16" RING TERM RoHS:否 制造商:AVX 產(chǎn)品:Junction Box - Wire to Wire 系列:9826 線規(guī):26-18 接線柱/接頭大小: 絕緣: 顏色:Red 型式:Female 觸點電鍍:Tin over Nickel 觸點材料:Beryllium Copper, Phosphor Bronze 端接類型:Crimp |
| S8-56R-TY | 功能描述:端子 #8 5/16’ RING TERM RoHS:否 制造商:AVX 產(chǎn)品:Junction Box - Wire to Wire 系列:9826 線規(guī):26-18 接線柱/接頭大小: 絕緣: 顏色:Red 型式:Female 觸點電鍍:Tin over Nickel 觸點材料:Beryllium Copper, Phosphor Bronze 端接類型:Crimp |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。