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參數(shù)資料
| 型號： | S822T |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Silicon NPN Planar RF Transistor(低噪聲高增益放大器應(yīng)用的NPN晶體管) |
| 中文描述： | 硅NPN平面射頻晶體管（低噪聲高增益放大器應(yīng)用的npn型晶體管） |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 146K |
| 代理商： | S822T |
S822T/S822TW/S822TRW
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
2 (8)
Rev. 3, 20-Jan-99
Document Number 85050
Absolute Maximum Ratings
T
amb
= 25 C, unless otherwise specified
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature range
Maximum Thermal Resistance
T
amb
= 25 C, unless otherwise specified
Parameter
Junction ambient
on glass fibre printed board (25 x 20 x 1.5) mm
3
plated with 35 m Cu
Test Conditions
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
T
stg
Value
12
6
2
8
30
150
Unit
V
V
V
mA
mW
C
C
T
amb
≤
125 C
–65 to +150
Test Conditions
Symbol
R
thJA
Value
450
Unit
K/W
Electrical DC Characteristics
T
amb
= 25 C, unless otherwise specified
Parameter
Collector cut-off current
Collector-base cut-off current
Emitter-base cut-off current
Collector-emitter breakdown voltage I
C
= 1 mA, I
B
= 0
Collector-emitter saturation voltage
DC forward current transfer ratio
Test Conditions
Symbol
I
CES
I
CBO
I
EBO
V
(BR)CEO
V
CEsat
h
FE
Min
Typ
Max Unit
100
100
1
V
CE
= 12 V, V
BE
= 0
V
CB
= 8 V, I
E
= 0
V
EB
= 1 V, I
C
= 0
A
nA
A
V
V
6
I
C
= 5 mA, I
B
= 0.5 mA
V
CE
= 3 V, I
C
= 1 mA
0.1
90
0.4
150
40
Electrical AC Characteristics
T
amb
= 25 C, unless otherwise specified
Parameter
Test Conditions
Symbol
Min
Typ
4.7
5.2
0.2
Max
Unit
GHz
GHz
pF
Transition frequency
V
CE
= 3 V, I
C
= 1 mA, f = 500 MHz
V
CE
= 2 V, I
C
= 1.5 mA, f = 500 MHz
V
CB
= 1 V, f = 1 MHz
Z
S
= Z
Sopt
, f = 450 MHz, V
CE
=
2 V, I
C
= 0.5 mA
Z
S
= Z
Sopt
, f = 945 MHz, V
CE
=
3 V, I
C
= 1 mA
Z
S
= Z
Sopt
, f = 945 MHz, V
CE
=
2 V, I
C
= 1.5 mA
V
CE
= 2 V, I
C
= 0.5 mA, f = 450MHz
V
CE
= 3 V, I
C
= 1 mA, f = 945 MHz
V
CE
= 2 V, I
C
= 1.5 mA, f = 945 MHz
V
CE
= 2 V, f = 500 MHz
V
CE
= 3 V, I
C
= 1 mA, f = 945 MHz
V
CE
= 2 V, I
C
= 1.5 mA, f = 945 MHz
f
T
Collector-base capacitance
C
cb
1.1
dB
Noise figure
F
opt
1.8
dB
2
dB
13.5
12.5
14.0
3
50
50
dB
dB
dB
mA
Power gain
G
pe
@F
opt
o t
Collector current for f
T
max
I
C
Real part of input impedance
Re
(h11e)
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