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參數(shù)資料
| 型號(hào)： | S7878 |
| 廠商： | Hamamatsu Photonics |
| 英文描述： | MOSFET, Switching; VDSS (V): -60; ID (A): -5; Pch : 20; RDS (ON) typ. (ohm) @10V: 0.14; RDS (ON) typ. (ohm) @4V[4.5V]: 0.2; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: -; toff (µs) typ: 10.8; Package: DPAK (S) |
| 中文描述： | 硅光電二極管高靈敏度X射線探測器 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 106K |
| 代理商： | S7878 |
Features
l
Ceramic scintillator for high sensitivity and reliability
unlike CsI (ceramic scintillator: no deliquescence)
l
5 × 5 element photodiode array
l
High sensitivity to X-rays: 1.8 times higher sensitivity
than CWO
l
Less afterglow: lower than CsI
<0.1 %/3 ms, <0.01 %/30 ms
l
Low crosstalk structure
Applications
l
X-ray fluorescence analysis
l
X-ray detection
P H O T O D I O D E
Si photodiode
S7878
High sensitivity X-ray detector
I
Absolute maximum ratings (Ta=25
°
C)
Parameter
Reverse voltage
Operating temperature
Storage temperature
Symbol
V
R
Max.
Topr
Tstg
Value
10
-10 to +60
-20 to +70
Unit
V
°
C
°
C
I
Photodiode electrical and optical characteristics (Ta=25
°
C, per element)
Parameter
Symbol
Spectral response range
λ
Peak sensitivity wavelength
λ
p
Condition
Min.
-
-
0.33
0.44
-
-
Typ.
Max.
-
-
-
-
10
-
Unit
nm
nm
A/W
A/W
pA
pF
320 to 1000
800
0.38
0.51
1.5
20
λ
=510 nm
λ
=
λ
p
V
R
=10 mV
V
R
=0 V, f=10 kHz
Photo sensitivity
S
Dark current
Terminal capacitance
I
D
Ct
I
X-ray sensitivity (tube current: 1.0 mA, aluminum filter: t=6 mm, distance=830 mm)
X-ray tube voltage
120 kV
Note) Sensitivity values are just for your reference. Actual sensitivity values may vary depending on an equipment type and
measurement conditions.
Value
1.2
Unit
nA
1
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
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