參數(shù)資料
型號: S7686
廠商: Hamamatsu Photonics
英文描述: MOSFET, Switching; VDSS (V): -60; ID (A): -5; Pch : 20; RDS (ON) typ. (ohm) @10V: 0.14; RDS (ON) typ. (ohm) @4V[4.5V]: 0.2; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: -; toff (µs) typ: 10.8; Package: DPAK (L)- (2)
中文描述: 光電二極管的靈敏度接近光譜發(fā)光效率
文件頁數(shù): 1/2頁
文件大小: 90K
代理商: S7686
Features
l
Spectral response analogous to CIE spectral luminous
efficiency
Spectral response range: 480 to 660 nm
Peak sensitivity wavelength: 550 nm
l
Ceramic package for reliability
l
Active area: 2.4 × 2.8 mm
l
High-speed response: 0.5 μs (V
R
=0 V, R
L
=1 k
)
l
fs value: 8 % Typ. (vertical light input)
Applications
l
Illuminometer
l
Luminance meter
P H O T O D I O D E
Si photodiode
S7686
Photodiode with sensitivity close to spectral luminous efficiency
S7686 is a Si photodiode having a spectral response characteristic that is more similar to the human eye sensitivity (spectral luminous efficiency)
than our conventional visible-compensated sensors (S1133, etc.).
I
Absolute maximum ratings (Ta=25 °C)
Parameter
Reverse voltage
Operating temperature
Storage temperature
Symbol
V
R
Max.
Topr
Tstg
Value
10
-10 to +60
-20 to +70
Unit
V
°C
°C
I
Electrical and optical characteristics (Ta=25
°
C)
Parameter
Spectral response range
Peak sensitivity wavelength
Photo sensitivity
Short circuit current
Dark current
Rise time
Terminal capacitance
Symbol
λ
λ
p
S
Isc
I
D
tr
Ct
Condition
Min.
-
-
-
-
-
-
-
Typ.
Max.
-
-
-
-
20
-
-
Unit
nm
nm
A/W
μA
pA
μs
pF
480 to 660
550
0.38
0.45
2
0.5
200
λ
=
λ
p
100
lx
, 2856 K
V
R
=1 V
V
R
=0 V, R
L
=1 k
V
R
=0 V, f=10 kHz
1
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