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參數(shù)資料
| 型號： | S71WS512PC0HF3HL3 |
| 廠商： | SPANSION LLC |
| 元件分類： | 存儲器 |
| 英文描述： | 1.8 Volt-only x16 Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM |
| 中文描述： | SPECIALTY MEMORY CIRCUIT, PBGA84 |
| 封裝： | 8 X 11.60 MM, 1.20 MM HEIGHT, LEAD FREE, FBGA-84 |
| 文件頁數(shù)： | 10/10頁 |
| 文件大?。?/td> | 160K |
| 代理商： | S71WS512PC0HF3HL3 |
8
S71WS-P based MCP Products
S71WS-P_00_A2 August 21, 2006
D a t a
S h e e t
( A d v a n c e
I n f o r m a t i o n )
6.
Revision History
6.1
Revision A (February 21, 2006)
Initial release.
6.2
Revision A1 (April 12, 2006)
Added the S71WS512PC0
6.3
Revision A2 (August 21, 2006)
Added the S71WS512PD0 108MHz OPN
Colophon
The products described in this document are designed, developed and manufactured as contemplated for general use, including without
limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as
contemplated (1) for any use that includes fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the
public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility,
aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for
any use where chance of failure is intolerable (i.e., submersible repeater and artificial satellite). Please note that Spansion will not be liable to
you and/or any third party for any claims or damages arising in connection with above-mentioned uses of the products. Any semiconductor
devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures by incorporating safety design
measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other abnormal
operating conditions. If any products described in this document represent goods or technologies subject to certain restrictions on export under
the Foreign Exchange and Foreign Trade Law of Japan, the US Export Administration Regulations or the applicable laws of any other country,
the prior authorization by the respective government entity will be required for export of those products.
Trademarks and Notice
The contents of this document are subject to change without notice. This document may contain information on a Spansion product under
development by Spansion. Spansion reserves the right to change or discontinue work on any product without notice. The information in this
document is provided as is without warranty or guarantee of any kind as to its accuracy, completeness, operability, fitness for particular purpose,
merchantability, non-infringement of third-party rights, or any other warranty, express, implied, or statutory. Spansion assumes no liability for any
damages of any kind arising out of the use of the information in this document.
Copyright 2006 Spansion Inc. All Rights Reserved. Spansion, the Spansion logo, MirrorBit, ORNAND, HD-SIM, and combinations thereof are
trademarks of Spansion Inc. Other names are for informational purposes only and may be trademarks of their respective owners.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S71WS512PC0HF3HR0 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:1.8 Volt-only x16 Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM |
| S71WS512PC0HF3HR2 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:1.8 Volt-only x16 Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM |
| S71WS512PC0HF3HR3 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:1.8 Volt-only x16 Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM |
| S71WS512PC0HF3HV0 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:1.8 Volt-only x16 Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM |
| S71WS512PC0HF3HV2 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:1.8 Volt-only x16 Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM |
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