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    參數(shù)資料
    型號: S71WS512NC0BFWZZ3
    廠商: Spansion Inc.
    英文描述: Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt
    中文描述: 堆疊式多芯片產(chǎn)品(MCP)的閃存和移動存儲芯片的CMOS 1.8伏特
    文件頁數(shù): 56/142頁
    文件大?。?/td> 1996K
    代理商: S71WS512NC0BFWZZ3
    56
    S29WSxxxN MirrorBit Flash Family For Multi-chip Products (MCP)
    S71WS512NE0BFWZZ_00_ A1 June 28, 2004
    A d v a n c e I n f o r m a t i o n
    When the Embedded Program algorithm is complete, the device then returns to
    the read mode and addresses are no longer latched. The system can determine
    the status of the program operation by using DQ7 or DQ6. Refer to the Write Op-
    eration Status section for information on these status bits.
    Any commands written to the device during the Embedded Program Algorithm
    are ignored.
    Note that the SecSi Sector, autoselect, and CFI functions are
    unavailable when a program operation is in progress.
    Note that a
    hard-
    ware reset
    immediately terminates the program operation. The program
    command sequence should be reinitiated once the device has returned to the
    read mode, to ensure data integrity.
    Programming is allowed in any sequence and across sector boundaries. Program-
    ming to the same word address multiple times without intervening erases is
    limited. For such application requirements, please contact your local Spansion
    representative.
    Any word cannot be programmed from “0” back to a “1.”
    Attempting to do so may cause the device to set DQ5 = 1, or cause the DQ7 and
    DQ6 status bits to indicate the operation was successful. However, a succeeding
    read will show that the data is still “0.” Only erase operations can convert a “0”
    to a “1.”
    Write Buffer Programming Command Sequence
    Write Buffer Programming Sequence allows for faster programming compared to
    the standard Program Command Sequence. Write Buffer Programming allows the
    system to write 32 words in one programming operation. See the "
    Write Buffer
    Programming Operation
    " section for the program command sequence.
    Table 18. Write Buffer Command Sequence
    Sequence
    Address
    555
    2AA
    Data
    00AA
    0055
    0025h
    Comment
    Unlock Command 1
    Unlock Command 2
    Write Buffer Load
    Specify the Number of Program
    Locations
    Not required in the Unlock Bypass mode
    Same as above
    Starting Address
    Starting Address
    Word Count
    Number of locations to program minus 1 (must be
    32 - 1 = 31)
    All addresses must be within write-buffer-page
    boundaries, but do not have to be loaded in any
    order
    Load 1st data word
    Starting Address
    Program Data
    Load next data word
    Write Buffer
    Location
    ...
    Write Buffer
    Location
    Program Data
    Same as above
    ...
    ...
    Same as above
    Load last data word
    Program Data
    Same as above
    Write Buffer Program Confirm
    Sector Address
    0029h
    This command must follow the last write buffer
    location loaded, or the operation will ABORT
    Device goes busy
    Status monitoring through DQ
    pins (Perform Data Bar Polling on
    the
    Last Loaded Address
    )
    相關(guān)PDF資料
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    S71WS512NE0BAEZZ0 Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt
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    相關(guān)代理商/技術(shù)參數(shù)
    參數(shù)描述
    S71WS512ND0 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Product (MCP)
    S71WS512ND0BAWA20 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Product (MCP)
    S71WS512ND0BAWA22 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Product (MCP)
    S71WS512ND0BAWA23 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Product (MCP)
    S71WS512ND0BAWA30 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Product (MCP)