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參數(shù)資料
| 型號(hào)： | S71WS512NB0BFWZZ0 |
| 廠商： | Spansion Inc. |
| 英文描述： | Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt |
| 中文描述： | 堆疊式多芯片產(chǎn)品（MCP）的閃存和移動(dòng)存儲(chǔ)芯片的CMOS 1.8伏特 |
| 文件頁(yè)數(shù)： | 21/142頁(yè) |
| 文件大?。?/td> | 1996K |
| 代理商： | S71WS512NB0BFWZZ0 |
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June 28, 2004 S71WS512NE0BFWZZ_00_A1
S29WSxxxN MirrorBit Flash Family For Multi-chip Products (MCP)
21
A d v a n c e I n f o r m a t i o n
Input/Output Descriptions
A23-A0
DQ15-DQ0
CE#
=
=
=
Address inputs for WS256N
Data input/output
Chip Enable input. Asynchronous relative to CLK for
the Burst mode.
Output Enable input. Asynchronous relative to CLK
for the Burst mode.
Write Enable input.
Device Power Supply
(1.65 – 1.95 V).
Input & Output Buffer Power Supply (1.35 – 1.70 V).
Ground
Output Buffer Ground
No Connect; not connected internally
Ready output. Indicates the status of the Burst read.
Clock input. In burst mode, after the initial word is
output, subsequent active edges of CLK increment
the internal address counter. Should be at V
IL
or V
IH
while in asynchronous mode
Address Valid input. Indicates to device that the
valid address is present on the address inputs.
Low = for asynchronous mode, indicates valid
address; for burst mode, causes starting address to
be latched.
High = device ignores address inputs
Hardware reset input. Low = device resets and
returns to reading array data
Hardware write protect input. At V
IL
, disables
program and erase functions in the four outermost
sectors. Should be at V
IH
for all other conditions.
Accelerated input. At V
HH
, accelerates
programming; automatically places device in unlock
bypass mode. At V
IL
, disables all program and erase
functions. Should be at V
IH
for all other conditions.
OE#
=
WE#
V
CC
=
=
V
IO
V
SS
V
SSIO
NC
RDY
CLK
=
=
=
=
=
=
AVD#
=
RESET#
=
WP#
=
ACC
=
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| S71WS512NB0BFWZZ3 | Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt |
| S71WS512NC0BAEZZ0 | Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt |
| S71WS512NC0BAEZZ2 | Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt |
| S71WS512NC0BAEZZ3 | Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S71WS512NB0BFWZZ2 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt |
| S71WS512NB0BFWZZ3 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt |
| S71WS512NC0 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Product (MCP) |
| S71WS512NC0BAEZZ0 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt |
| S71WS512NC0BAEZZ2 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt |
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