參數(shù)資料
型號： S71PL129JC0BFW9Z0
廠商： SPANSION LLC
元件分類： 存儲器
英文描述： Stacked Multi-Chip Product (MCP) Flash Memory
中文描述： SPECIALTY MEMORY CIRCUIT, PBGA64
封裝： 8 X 11.60 MM, 1.20 MM HEIGHT, LEAD FREE, FBGA-64
文件頁數(shù)： 122/149頁
文件大小： 2693K
代理商： S71PL129JC0BFW9Z0
122
Type 2 pSRAM
pSRAM_Type02_15A1 June 25, 2004
A d v a n c e I n f o r m a t i o n
16M pSRAM
Notes:
1.
Standby mode is supposed to be set up after at least one active operation after power up. ISB1 is measure after 60ms from
the time when standby mode is set up.
32M pSRAM
Notes:
1.
Standby mode is supposed to be set up after at least one active operation after power up. ISB1 is measure after 60ms from
the time when standby mode is set up.
Item
Symbol
Test Conditions
Min Typ Max Unit
Average Operating
Current
I
CC1
Cycle time= 1μs, 100% duty, I
IO
= 0mA,
CS1#
≤
0.2V, LB#
≤
0.2V and/or UB#
≤
0.2V,
CS2
≥
V
CC
-0.2V, V
IN
≤
0.2V or V
IN
≥
VCC-0.2V
—
—
7
mA
I
CC2
Async
Cycle time= Min, I
IO
= 0mA, 100% duty,
CS1#= V
IL
, CS2= V
IH
LB#= V
IL
and/or UB#= V
IL
,
V
IN
= V
IH
or V
IL
—
—
30
mA
Page
Cycle time= t
RC
+ 3t
PC
, I
IO
= 0mA, 100% duty,
CS1#= V
IL
, CS2= V
IH
LB#= V
IL
and/or UB#= V
IL
,
V
IN
-V
IH
or V
IL
35
mA
Standby Current (CMOS)
I
SB1
(Note 1)
Other inputs= 0-VCC
1. CS1#
≥
V
CC
- 0.2, CS2
≥
V
CC
- 0.2V (CS1#
controlled) or
2. 0V
≤
CS2
≤
0.2V (CS2 controlled)
—
—
80
mA
Item
Symbol
Test Conditions
Min Typ Max Unit
Average Operating
Current
I
CC1
Cycle time= 1μs, 100% duty, I
IO
= 0mA,
CS1#
≤
0.2V, LB#
≤
0.2V and/or UB#
≤
0.2V,
CS2
≥
V
CC
-0.2V, V
IN
≤
0.2V or V
IN
≥
VCC-0.2V
—
—
7
mA
I
CC2
Async
Cycle time= Min, I
IO
= 0mA, 100% duty,
CS1#= V
IL
, CS2= V
IH
LB#= V
IL
and/or UB#= V
IL
,
V
IN
= V
IH
or V
IL
—
—
35
mA
Page
Cycle time= t
RC
+ 3t
PC
, I
IO
= 0mA, 100% duty,
CS1#= V
IL
, CS2= V
IH
LB#= V
IL
and/or UB#= V
IL
,
V
IN
-V
IH
or V
IL
40
mA
Standby Current (CMOS)
I
SB1
(Note 1)
Other inputs= 0-VCC
1. CS1#
≥
V
CC
- 0.2, CS2
≥
V
CC
- 0.2V (CS1#
controlled) or
2. 0V
≤
CS2
≤
0.2V (CS2 controlled)
—
—
100
mA
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