
116
pSRAM Type 1
pSRAM_Type01_12_A1 August 30, 2004
A d v a n c e I n f o r m a t i o n
Deep ICC Characteristics (for 64Mb)
Address Patterns for PAR (A3= 0, A4=1) (32M)
Address Patterns for RMS (A3 = 1, A4 = 1) (32M)
Item
Symbol
Test
Array Partition
Typ
Max
Unit
PASR Mode Standby Current
I
PASR
V
IN
= V
CC
or 0V, Chip Disabled, t
A
= 85°C
None
10
μA
1/4 Array
60
1/2 Array
80
Full Array
120
Item
Symbol
Max Temperature
Typ
Max
Unit
Temperature Compensated Refresh Current
I
TCR
15°C
50
μA
45°C
60
70°C
80
85°C
120
Item
Symbol
Test
Typ
Max
Unit
Deep Sleep Current
I
ZZ
V
IN
= V
CC
or 0V, Chip in ZZ# mode, t
A
= 25°C
10
μA
A2
A1
A0
Active Section
Address Space
Size
Density
0
1
1
One-quarter of die
000000h - 07FFFFh
512Kb x 16
8Mb
0
1
0
One-half of die
000000h - 0FFFFFh
1Mb x 16
16Mb
x
0
0
Full die
000000h - 1FFFFFh
2Mb x 16
32Mb
1
1
1
One-quarter of die
180000h - 1FFFFFh
512Kb x 16
8Mb
1
1
0
One-half of die
100000h - 1FFFFFh
1Mb x 16
16Mb
A2
A1
A0
Active Section
Address Space
Size
Density
0
1
1
One-quarter of die
000000h - 07FFFFh
512Kb x 16
8Mb
0
1
0
One-half of die
000000h - 0FFFFFh
1Mb x 16
16Mb
1
1
1
One-quarter of die
180000h - 1FFFFFh
512Kb x 16
8Mb
1
1
0
One-half of die
100000h - 1FFFFFh
1Mb x 16
16Mb