
February 25, 2004 pSRAM_Type03_06A0
pSRAM Type 3
111
A d v a n c e I n f o r m a t i o n
W
t
WC
Write Cycle Time
70
-
ns
t
WP
Write Pulse Width
50
-
ns
t
AW
Address Valid to End of Write
60
-
ns
t
CW
Chip Enable to End of Write
60
-
ns
t
BW
Data Byte Control to End of Write
60
-
ns
t
AS
Address Set-up Time
0
-
ns
t
WR
Write Recovery Time
0
-
ns
t
WZH
WE#
Low to Output High-Z
-
20
ns
t
OW
WE#
High to Output in High-Z
5
-
ns
t
DW
Data to Write Overlap
35
-
ns
t
DH
Data Hold Time
0
-
ns
t
WEH
WE# High Time
5
10
ns
Table 33. AC Test Conditions
Parameter
Condition
Output load
50 pF
+
1 TTL Gate
Input pulse level
0.4 V, 2.4
Timing measurements
0.5
×
V
CC
t
R
, t
F
5 ns
Note:
Including scope and jig capacitance
Figure 33. AC Test Loads
Table 32. AC Characteristics and Operating Conditions (T
A
= -25
°
C to 85
°
C, V
DD
= 2.6 to 3.3V) (Continued)
Cycle
Symbol
Parameter
70
Unit
Min
Max
CL
RL = 50
Z0 = 50
DOUT
VL = 1.5 V
= 50 pF (see Note)