參數(shù)資料
型號(hào)： S71GS256NB0BAWAK3
廠商： Spansion Inc.
英文描述： 128N based MCPs
中文描述： 基于MCP的128N
文件頁(yè)數(shù)： 5/195頁(yè)
文件大?。?/td> 1957K
代理商： S71GS256NB0BAWAK3
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December 17, 2004 S71GS256/128N_00_A0
5
A d v a n c e I n f o r m a t i o n
Table 44. Asynchronous WRITE Timing
Parameters—CE#-Controlled .............................................147
Figure 49. LB#/UB#-Controlled Asynchronous WRITE ........... 149
Table 45. Asynchronous WRITE Timing Parameters—LB#/UB#-
Controlled .......................................................................149
Figure 50. WE#-Controlled Asynchronous WRITE.................. 151
Table 46. Asynchronous WRITE Timing Parameters—WE#-
Controlled .......................................................................151
Figure 51. Asynchronous WRITE Using ADV# ....................... 153
Table 47. Asynchronous WRITE Timing
Parameters Using ADV# ....................................................154
Figure 52. Burst WRITE Operation...................................... 155
Table 48. Burst WRITE Timing Parameters ...........................156
Figure 53. Continuous Burst WRITE Showing an Output Delay with
BCR[8] = 0 for End-of-Row Condition ................................. 157
Table 49. Burst WRITE Timing Parameters—BCR[8] = 0 ........157
Figure 54. Burst WRITE Followed by Burst READ .................. 158
Table 50. WRITE Timing Parameters—Burst WRITE Followed by
Burst READ .....................................................................158
Table 51. READ Timing Parameters—Burst WRITE Followed by Burst
READ ..............................................................................158
Figure 55. Asynchronous WRITE Followed by Burst READ ...... 159
Table 52. WRITE Timing Parameters—Asynchronous WRITE
Followed by Burst READ ....................................................160
Table 53. READ Timing Parameters—Asynchronous WRITE Followed
by Burst READ .................................................................160
Figure 56. Asynchronous WRITE (ADV# LOW) Followed By Burst
READ.............................................................................. 161
Table 54. Asynchronous WRITE Timing
Parameters—ADV# LOW ...................................................161
Table 55. Burst READ Timing Parameters ............................162
Figure 57. Burst READ Followed by Asynchronous WRITE (WE#-Con-
trolled) ........................................................................... 163
Table 56. Burst READ Timing Parameters ............................164
Table 57. Asynchronous WRITE Timing
Parameters—WE# Controlled .............................................164
Figure 58. Burst READ Followed by Asynchronous WRITE Using
ADV# ............................................................................. 165
Table 58. Burst READ Timing Parameters ............................166
Table 59. Asynchronous WRITE Timing
Parameters Using ADV# ....................................................166
Figure 59. Asynchronous WRITE Followed by Asynchronous READ—
ADV# LOW...................................................................... 167
Table 60. WRITE Timing Parameters—ADV# LOW .................167
Table 61. READ Timing Parameters—ADV# LOW ..................168
Figure 60. Asynchronous WRITE Followed by
Asynchronous READ ......................................................... 169
Table 62. WRITE Timing Parameters—Asynchronous WRITE
Followed by Asynchronous READ ........................................169
Table 63. READ Timing Parameters—Asynchronous WRITE Followed
by Asynchronous READ .....................................................170
How Extended Timings Impact CellularRAM
Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 170
Introduction ........................................................................................................170
Asynchronous WRITE Operation ................................................................171
Figure 61. Extended Timing for t
CEM.............................................. 171
Figure 62. Extended Timing for t
TM................................................ 171
Table 64. Extended Cycle Impact on READ and WRITE Cycles 171
Extended WRITE Timing— Asynchronous WRITE Operation ......171
Figure 63. Extended WRITE Operation ................................ 172
Page Mode READ Operation ........................................................................172
Burst-Mode Operation ....................................................................................172
Summary ..............................................................................................................172
CellularRAM-2A
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 173
General Description . . . . . . . . . . . . . . . . . . . . . . 173
Figure 64. Functional Block Diagram................................... 174
Table 65. Pin Descriptions ................................................. 174
Table 66. Bus Operations—Asynchronous Mode ................... 175
Functional Description . . . . . . . . . . . . . . . . . . . . .176
Power-Up Initialization ....................................................................................176
Figure 65. Power-Up Initialization Timing ............................ 176
Bus Operating Modes . . . . . . . . . . . . . . . . . . . . . 176
Asynchronous Mode ........................................................................................176
Figure 66. READ Operation................................................ 177
Figure 67. WRITE Operation.............................................. 177
Page Mode READ Operation ........................................................................177
Figure 68. Page Mode READ Operation................................ 178
LB# / UB# Operation ......................................................................................178
Low Power Operation . . . . . . . . . . . . . . . . . . . . . 178
Standby Mode Operation ...............................................................................178
Temperature Compensated Refresh ...........................................................178
Partial Array Refresh ........................................................................................179
Deep Power-Down Operation .....................................................................179
Configuration Register Operation ...............................................................179
Figure 69. Load Configuration Register Operation................. 180
Table 67. Configuration Register Bit Mapping ....................... 181
Table 68. 64Mb Address Patterns for PAR (CR[4] = 1) .......... 181
Absolute Maximum Ratings . . . . . . . . . . . . . . . . 182
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . 183
Table 69. Electrical Characteristics and Operating Conditions . 183
Table 70. Temperature Compensated Refresh Specifications and
Conditions ....................................................................... 183
Table 71. Partial Array Refresh Specifications and Conditions . 184
Table 72. Deep Power-Down Specifications .......................... 184
Table 73. Capacitance Specifications and Conditions ............. 184
AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . 184
Figure 70. AC Input/Output Reference Waveform................. 184
Figure 71. Output Load Circuit........................................... 184
Table 74. Output Load Circuit ............................................ 184
Table 75. READ Cycle Timing Requirements ......................... 185
Table 76. WRITE Cycle Timing Requirements ....................... 186
Table 77. Load Configuration Register Timing Requirements .. 186
Table 78. Deep Power Down Timing Requirements ............... 186
Table 79. Power-up Initialization Timing Parameters ............. 187
Figure 72. Power-up Initialization Period ............................. 187
Figure 73. Load Configuration Register Timing ..................... 187
Table 80. Load Configuration Register Timing Requirements .. 187
Figure 74. Deep Power Down Entry/Exit TIming ................... 188
Table 81. Load Configuration Register Timing Requirements .. 188
Figure 75. Single READ Operation (WE# = V
IH
) ................... 188
Table 82. READ Timing Parameters .................................... 189
Figure 76. Page Mode Read Operation (WE# = V
IH
) ............. 189
Table 83. Page Mode READ Timing Parameters .................... 189
Figure 77. WRITE Cycle (WE# Control) ............................... 190
Table 84. Write Timing Parameters ..................................... 190
Figure 78. Write Timing Parameters (CE# Control) ............... 191
Table 85. Write Timing Parameters (CE# Control) ................ 191
Figure 79. WRITE Cycle (LB# / UB# Control)....................... 192
Table 86. Write Timing Parameters (LB# / UB# Control) ....... 192
How Extended Timings Impact CellularRAM
Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 193
Introduction ........................................................................................................193
Operation When Page Mode is Disabled ..................................................193
Figure 80. Extended Timing for t
CEM.............................................. 193
Figure 81. Extended Timing for t
TM................................................ 193
Operation When Page Mode is Enabled ....................................................193
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S71GS256NB0BFWAK0 128N based MCPs
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S71GS256NB0BFWAK3 128N based MCPs
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S71GS256NB0BFWAK0 制造商:SPANSION 制造商全稱:SPANSION 功能描述:128N based MCPs
S71GS256NB0BFWAK2 制造商:SPANSION 制造商全稱:SPANSION 功能描述:128N based MCPs
S71GS256NB0BFWAK3 制造商:SPANSION 制造商全稱:SPANSION 功能描述:128N based MCPs
S71GS256NC0 制造商:SPANSION 制造商全稱:SPANSION 功能描述:128N based MCPs
S71GS256NC0BAWAK0 制造商:SPANSION 制造商全稱:SPANSION 功能描述:128N based MCPs
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