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參數(shù)資料
| 型號： | S71GL064A40BAI0F3 |
| 廠商： | Spansion Inc. |
| 英文描述： | Stacked Multi-Chip Product (MCP) Flash Memory and RAM |
| 中文描述： | 堆疊式多芯片產(chǎn)品（MCP）的閃存和RAM |
| 文件頁數(shù)： | 3/102頁 |
| 文件大小： | 1606K |
| 代理商： | S71GL064A40BAI0F3 |
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100
S71GL032A Based MCPs
S71GL032A_00_A0 March 31, 2005
Advance
Info rmation
Figure 36. Timing Waveform of Write Cycle(2) (CS# controlled, if BYTE# is Low, Ignore UB#/LB# Timing)
Notes:
1. A write occurs during the overlap (tWP) of low CS1# and low WE#. A write begins when CS1# goes low and WE#
goes low with asserting UB# or LB# for single byte operation or simultaneously asserting UB# and LB# for double
byte operation. A write ends at the earliest transition when CS1# goes high and WE# goes high. The tWP is
measured from the beginning of write to the end of write.
2. tCW is measured from the CS1# going low to the end of write.
3. tAS is measured from the address valid to the beginning of write.
4. tWR is measured from the end of write to the address change. tWR applied in case a write ends as CS1# or WE#
going high.
Figure 37. Timing Waveform of Write Cycle(3) (UB#, LB# controlled)
High-Z
tWC
tCW(2)
tAW
tBW
tWP(1)
tDH
tDW
tWR(4)
tAS(3)
Address
CS1#
CS2
UB#, LB#
WE#
Data in
Data out
Data Valid
High-Z
tWC
tCW(2)
tBW
tWP(1)
tDH
tDW
tWR(4)
tAW
tAS(3)
tCW(2)
Address
CS1#
CS2
UB#, LB#
WE#
Data in
Data out
Data Valid
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| S71GL064A40BAW0B0 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Product (MCP) Flash Memory and RAM |
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| S71GL064A40BAW0B3 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Product (MCP) Flash Memory and RAM |
| S71GL064A40BAW0F0 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Product (MCP) Flash Memory and RAM |
| S71GL064A40BAW0F2 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Product (MCP) Flash Memory and RAM |
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