參數(shù)資料
型號: S71GL064A08BAW0F3
廠商: SPANSION LLC
元件分類: 存儲器
英文描述: Stacked Multi-Chip Product (MCP) Flash Memory and RAM
中文描述: SPECIALTY MEMORY CIRCUIT, PBGA56
封裝: 7 X 9 MM, 1.20 MM HEIGHT, LEAD FREE, FBGA-56
文件頁數(shù): 5/134頁
文件大?。?/td> 2383K
代理商: S71GL064A08BAW0F3
100
S71GL064A based MCPs
S71GL064A_00_A2 February 8, 2005
Advance
Info rmation
ICC Characteristics
1
0
No PASR
None
0
1
Bottom quarter of die
000000h-0FFFFFh
1Mb x 16
16Mb
0
1
0
Bottom half of die
000000h-1FFFFFh
2Mb x 16
32Mb
0
1
Reserved
0
Full array
000000h-3FFFFFh
4Mb x 16
64Mb
Table 26. Deep ICC Characteristics (for 64Mb)
Item
Symbol
Test
Array Partition Typ Max Unit
PASR Mode Standby Current
IPASR
VIN = VCC or 0V, Chip Disabled, tA = 85°C
None
10
A
1/4 Array
60
1/2 Array
80
Full Array
120
Item
Symbol
Max Temperature
Typ
Max
Unit
Temperature Compensated Refresh Current
ITCR
15°C
50
A
45°C
60
70°C
80
85°C
120
Item
Symbol
Test
Typ
Max
Unit
Deep Sleep Current
IZZ
VIN = VCC or 0V, Chip in ZZ# mode, tA = 25°C
10
A
Table 27. Address Patterns for PAR (A3= 0, A4=1) (32M)
A2 A1
A0
Active Section
Address Space
Size
Density
0
1
One-quarter of die
000000h - 07FFFFh
512Kb x 16
8Mb
0
1
0
One-half of die
000000h - 0FFFFFh
1Mb x 16
16Mb
x
0
Full die
000000h - 1FFFFFh
2Mb x 16
32Mb
1
One-quarter of die
180000h - 1FFFFFh
512Kb x 16
8Mb
1
0
One-half of die
100000h - 1FFFFFh
1Mb x 16
16Mb
Table 28. Address Patterns for RMS (A3 = 1, A4 = 1) (32M)
A2 A1
A0
Active Section
Address Space
Size
Density
0
1
One-quarter of die
000000h - 07FFFFh
512Kb x 16
8Mb
0
1
0
One-half of die
000000h - 0FFFFFh
1Mb x 16
16Mb
Table 25. Address Patterns for PASR (A4=1) (64M) (Continued)
A2 A1 A0
Active Section
Address Space
Size
Density
相關(guān)PDF資料
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S71GL064A08BFI0B2 Stacked Multi-Chip Product (MCP) Flash Memory and RAM
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S71GL064A08BFW0B2 Stacked Multi-Chip Product (MCP) Flash Memory and RAM
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