參數(shù)資料
型號(hào)： S70WS512N00BFWA23
廠(chǎng)商： Spansion Inc.
英文描述： Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
中文描述： 同硅晶片堆疊多芯片產(chǎn)品（MCP）的512兆位（32兆× 16位）的CMOS 1.8伏，只有同時(shí)讀/寫(xiě)，突發(fā)模式閃存
文件頁(yè)數(shù)： 8/93頁(yè)
文件大?。?/td> 846K
代理商： S70WS512N00BFWA23
6
S70WS512N00 Based MCPs
S70WS512N00_00_A0 March 14, 2005
A d v a n c e I n f o r m a t i o n
Figures
Figure 8.1
Figure 8.2
Figure 8.3
Figure 8.4
Figure 8.5
Figure 8.6
Figure 9.1
Figure 9.2
Figure 9.3
Figure 12.1
Figure 12.2
Figure 12.3
Figure 12.4
Figure 12.5
Figure 12.6
Figure 12.7
Figure 12.8
Figure 12.9
Figure 12.10
Figure 12.11
Figure 12.12
Figure 12.13
Figure 12.14
Figure 12.15
Figure 12.16
Figure 12.17
Figure 12.18
Figure 12.19
Figure 12.20
Figure 12.21
Figure 12.22
Figure 12.23
Figure 12.24
Synchronous/Asynchronous State Diagram...........................................................................................23
Synchronous Read ............................................................................................................................26
Single Word Program.........................................................................................................................32
Write Buffer Programming Operation ...................................................................................................36
Sector Erase Operation ......................................................................................................................38
Write Operation Status Flowchart ........................................................................................................45
Advanced Sector Protection/Unprotection .............................................................................................51
PPB Program/Erase Algorithm .............................................................................................................54
Lock Register Program Algorithm.........................................................................................................57
Maximum Negative Overshoot Waveform .............................................................................................64
Maximum Positive Overshoot Waveform ...............................................................................................64
Test Setup .......................................................................................................................................65
Input Waveforms and Measurement Levels...........................................................................................65
V
CC
Power-up Diagram ......................................................................................................................66
CLK Characterization .........................................................................................................................68
CLK Synchronous Burst Mode Read......................................................................................................69
8-word Linear Burst with Wrap Around.................................................................................................70
8-word Linear Burst without Wrap Around ............................................................................................70
Linear Burst with RDY Set One Cycle Before Data ..................................................................................71
Asynchronous Mode Read...................................................................................................................72
Reset Timings...................................................................................................................................72
Chip/Sector Erase Operation Timings ...................................................................................................74
Asynchronous Program Operation Timings ............................................................................................75
Synchronous Program Operation Timings .............................................................................................76
Accelerated Unlock Bypass Programming Timing ...................................................................................76
Data# Polling Timings (During Embedded Algorithm) .............................................................................77
Toggle Bit Timings (During Embedded Algorithm) ..................................................................................77
Synchronous Data Polling Timings/Toggle Bit Timings ............................................................................78
DQ2 vs. DQ6 ....................................................................................................................................78
Latency with Boundary Crossing when Frequency > 66 MHz....................................................................79
Latency with Boundary Crossing into Program/Erase Bank ......................................................................80
Example of Wait State Insertion..........................................................................................................81
Back-to-Back Read/Write Cycle Timings ...............................................................................................82
相關(guān)PDF資料
PDF描述
S70WS512N00BFWA30 Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
S70WS512N00BFWA32 Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
S70WS512N00BFWA33 Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
S70WS512N00BFWAA0 Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
S70WS512N00BFWAA3 Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S70WS512N00BFWA30 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
S70WS512N00BFWA32 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
S70WS512N00BFWA33 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
S70WS512N00BFWAA0 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
S70WS512N00BFWAA2 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
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