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參數(shù)資料
| 型號(hào)： | S6A13 |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Thyristor Silicon Planar Type |
| 中文描述： | 東芝硅平面型晶閘管 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 137K |
| 代理商： | S6A13 |
S6A13
2002-01-23
2
Electrical Characteristics
(Ta 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Repetitive peak OFF-state current
I
DRM
V
DRM
Rated
10
A
Peak ON-state voltage (thyristor)
V
TM
I
TM
25 A
1.5
V
Peak forward voltage (diode)
V
FM
I
FM
25 A
2.0
V
Gate trigger voltage
V
GT
1.0
V
Gate trigger current
I
GT
V
D
6 V, R
L
10
30
mA
Gate non-trigger voltage
V
GD
V
D
Rated, Tc 125°C
0.2
V
Critical rate of rise of OFF-state voltage
dv/dt
V
DRM
Rated, Tc 125°C
Exponential Rise
50
V/ s
Holding current
I
H
V
D
6 V, I
TM
1 A
35
mA
Thermal resistance (junction to ambient)
R
th (j-a)
DC
70
°C/W
Equivalent Circuit
0.5 I
P
t
w
2 s
t
I
P
0.5 I
P
t
di/dt
t
w
LC
, I
P
L/C
V
D
Test Circuit Examples
C
R
L
V
D
S
GATE
CATHODE
ANODE
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