參數(shù)資料
型號(hào)： S6775
廠商： Hamamatsu Photonics
英文描述： Si PIN photodiode Plastic SIP (Single In-line Package)
中文描述： 硅PIN光電二極管塑料高級(jí)督察（單列直插式封裝）
文件頁(yè)數(shù)： 2/2頁(yè)
文件大?。?/td> 112K
代理商： S6775
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho,
Higashi-ku,
Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesv
gen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 2006 Hamamatsu Photonics K.K.
Si PIN photodiode
S2506/S6775/S6967 series, S6786
Cat. No. KPIN1048E02
Jun. 2006 DN
I
Dimensional outline (unit: mm, tolerance unless otherwise noted: ±0.1)
I
Spectral response
AMBIENT TEMPERATURE
(C)
D
1 pA
10 pA
100 pA
1 nA
10 nA
10 μA
-20
0
20
40
60
(Typ.)
80
100 nA
1 μA
S6786 (V
R
=10 V)
S2506-02/-04 (V
R
=12 V)
S6775/-01, S6967/-01 (V
R
=10 V)
S6786
S2506-02/-04
S6967/-01
S6775/-01
1 pF
10 pF
100 pF
1 nF
0.1
1
10
100
REVERSE VOLTAGE (V)
T
(Typ. Ta=25
C, f=1 MHz)
S2506-02/-04
S6786
1.0
0.5
3.5 ± 0.2
7.0 ± 0.2
7
(
a
2
5.08
(0.3)
(0.3)
(0.5)
(0.5)
(0.4)
(0.4)
(0.6)
(0.6)
1.0
1.0
1
CENTER OF
DETAILS OF LEAD ROOT
ACTIVE AREA
b
2.7 ± 0.2
0.2 MAX.
0.5
1.4
1.1
INCIDENT LIGHT
5
a
Type No.
3.65 ± 0.2
S6775/S6967
2.8 ± 0.2
b
5.5
×
4.8
2.77
×
2.77
S2506 series
I
Dark current vs. ambient temperature
I
Terminal capacitance vs.
reverse voltage
KPINB0169EB
KPINB0170EB
KPINA0084EB
90
80
70
60
50
30
RELATIVE SENSITIVITY
40
20
10
0
10
20
90
80
70
60
50
30
40
80 %
100 %
20 %
40 %
60 %
(Typ. Ta=25
C)
I
Directivity (S2506-02)
KPINB0065EB
REVERSE VOLTAGE (V)
D
1 pA
10 pA
100 pA
1 nA
10 nA
0.01
0.1
1
10
100
(Typ. Ta=25
C)
S6786
S6967/-01
S2506-02/-04
S6775/-01
I
Dark current vs. reverse voltage
KPINB0168EB
WAVELENGTH
(nm)
T
%
/
C
)
0
200
400
600
800
1000
+1.0
+0.5
(Typ.)
+1.5
-0.5
I
Photo sensitivity temperature characteristic
(S2506-02)
KPINB0063EC
WAVELENGTH (nm)
P
0
200
0.1
0.2
0.3
0.4
0.8
0.7
400
600
800
1000
(Typ. Ta=25
C)
0.5
0.6
S2506-04
S2506-02
S6786
QE=100 %
KPINB0348EA
WAVELENGTH (nm)
P
0
200
0.1
0.2
0.3
0.4
0.8
0.7
400
600
800
1000
(Typ. Ta=25
C)
0.5
0.6
S6967
S6967-01
QE=100 %
S6775
S6775-01
KPINB0349EA
S2506 series, S6786
S6775/S6967 series
2
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