參數(shù)資料
型號(hào): S5B/57T
廠商: VISHAY SEMICONDUCTORS
元件分類: 整流器
英文描述: 5 A, 100 V, SILICON, RECTIFIER DIODE, DO-214AB
封裝: PLASTIC, SMC, 2 PIN
文件頁(yè)數(shù): 1/4頁(yè)
文件大小: 304K
代理商: S5B/57T
S5A thru S5M
Document Number 88931
19-Sep-05
Vishay General Semiconductor
www.vishay.com
1
DO-214AB (SMC)
New Product
Surface Mount Glass Passivated Rectifier
Major Ratings and Characteristics
IF(AV)
5.0 A
VRRM
50 V to 1000 V
IFSM
100 A
IR
10 A
VF
1.15 V
Tj max.
150 °C
Features
Low profile package
Ideal for automated placement
Glass passivated chip junction
Low forward voltage drop
Low leakage current
High forward surge capability
Meets MSL level 1, per J-STD-020C
Solder Dip 260 °C, 40 seconds
Typical Applications
For use in general purpose rectification of power sup-
plies, inverters, converters and freewheeling diodes
for consumer, automotive and Telecommunication
Mechanical Data
Case: DO-214AB (SMC)
Epoxy meets UL-94V-0 Flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: Color band denotes cathode end
Maximum Ratings
(TA = 25 °C unless otherwise noted)
Parameter
Symbol
S5A
S5B
S5D
S5G
S5J
S5K
S5M
Unit
Device marking code
5A
5B
5D
5G
5J
5K
5M
Maximum recurrent peak reverse voltage
VRRM
50
100
200
400
600
800
1000
V
Maximum RMS voltage
VRMS
35
70
140
280
420
560
700
V
Maximum DC blocking voltage
VDC
50
100
200
400
600
800
1000
V
Maximum average forward rectified current at TL= 75 °C
IF(AV)
5.0
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
100
A
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
°C
相關(guān)PDF資料
PDF描述
S5M-HE3 5 A, 1000 V, SILICON, RECTIFIER DIODE, DO-214AB
S5G-HE3 5 A, 400 V, SILICON, RECTIFIER DIODE, DO-214AB
S5A-TP 5 A, 50 V, SILICON, RECTIFIER DIODE, DO-214AB
S5B-TP 5 A, 100 V, SILICON, RECTIFIER DIODE, DO-214AB
S5B 5 A, 100 V, SILICON, RECTIFIER DIODE, DO-214AB
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