參數(shù)資料
型號: S581-4000-14
廠商: TriQuint Semiconductor,Inc.
英文描述: 9.9-11.2Gb/s Optical Modulator Driver
中文描述: 9.9 - 11.2Gb / s光調(diào)制器驅(qū)動
文件頁數(shù): 2/13頁
文件大?。?/td> 920K
代理商: S581-4000-14
TriQuint Semiconductor Texas : (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Datasheet
2
SYMBOL
PARAMETER 6/
VALUE
NOTES
Vd1, Vd2T
POSITIVE SUPPLY VOLTAGE
Drain Voltage
8 V
Id1
Id2T
POSITIVE SUPPLY CURRENT
Drain Current
Drain Current
100 mA
300mA
1/
P
d
POWER DISSIPATION
4 W
2/
Vg1, Vg2
Ig1, Ig2
NEGATIVE GATE
Voltage
Gate Current
0 V to –3 V
5 mA
Vctrl1, Vctrl2
Ictrl1, Ictrl2
CONTROL GATE
Voltage
Gate Current
Vd/2 to –3 V
5 mA
3/
P
IN
V
IN
RF INPUT
Sinusoidal Continuous Wave Power
10.7Gb/s PRBS Input Voltage Peak to Peak
23 dBm
4 Vpp
T
CH
OPERATING CHANNEL TEMPERATURE
150
0
C
4/ 5/
T
STG
STORAGE TEMPERATURE
-40 to 125
0
C
TGA4953EPU
Notes:
1/ Assure the combination of Vd and Id does not exceed maximum power dissipation rating.
2/ When operated at this bias condition with a base plate temperature of 80
0
C, the median life is reduced.
3/ Assure Vctl1 never exceeds Vd1 and assure Vctrl2 never exceeds Vd2 during bias up and down sequences.
4/ These ratings apply to each individual FET.
5/ Junction operating temperature will directly affect the device median time to failure (MTTF). For maximum
life, it is recommended that junction temperatures be maintained at the lowest possible levels.
6/ These ratings represent the maximum operable values for the device.
MAXIMUM RATINGS
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
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