
S5767 and S5768 are digital output photo ICs consisting of a photodiode, an amplifier, a schmitt trigger circuit and an output transistor, all
integrated in a single chip and molded into a clear plastic package.
Features
l Low-voltage operation: 2.2 to 7 V
l Clear plastic package with lens
l Low current consumption
l Transistor output with built-in pull-up resistor
l S5767: “H” level output at light input
S5768: “L” level output at light input
Applications
l Low-speed optical links
l Rotary encoders
PHOTO
IC
Low-voltage operation photo IC
Operation at low voltage from 2.2 V
S5767, S5768
s Absolute maximum ratings (Ta=25
°C)
Parameter
Symbol
Value
Unit
Supply voltage
Vcc
-0.5 to +7
V
Output voltage
Vo
-0.5 to Vcc
V
Low level output current
Io
8
mA
Power dissipation
P
250
mW
Operating temperature
Topr
-25 to +85
°C
Storage temperature
Tstg
-40 to +100
°C
Soldering
-
260 °C, 3 s, at least 2.5 mm away from package surface
-
s Electrical and optical characteristics (Ta=25
°C, Vcc=5 V, light source: λp=660 nm LED, unless otherwise noted)
S5767
S5768
Parameter
Symbol
Condition
Min.
Typ.
Max.
Min.
Typ.
Max.
Unit
Supply voltage
Vcc
2.2
-
7
2.2
-
7
V
Low level output voltage
VOL
IOL=4 mA *1
-
0.1
0.4
-
0.1
0.4
V
High level output voltage
VOH
*2
4.9
-
4.9
-
V
Low level current consumption
ICCL
*1
-
1.4
3
-
1.4
3
mA
High level current consumption
ICCH
*2
-
1.2
3
-
1.2
3
mA
L
→H Threshold illuminance
ELH
-1
3
-
--
W/mm2
H
→L Threshold illuminance
EHL
-
1
3
W/mm2
Hysterisis
-
*3
-
0.85
-
0.9
-
L
→H Propagation delay time
tPLH
-
1
5
-
1.5
8
s
H
→L Propagation delay time
tPHL
3
W/mm2 *4
-1.5
8
-
1
5
s
Peak sensitivity wavelength
λp
-
850
-
850
-
nm
Rise time
tr
-
0.03
-
0.03
-
s
Fall time
tf
3
W/mm2 *4
-
0.07
-
0.07
-
s
*1: S5767: E (illuminance) =0
W/mm2, S5768: E=3 W/mm2
*2: S5767: E=3
W/mm2, S5768: E=0 W/mm2
*3: S5767: EHL/ELH, S5768: ELH/EHL
*4: S5767: RL=2.2 k
, S5768: RL=2.2 k