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參數(shù)資料
| 型號： | S5295B |
| 元件分類： | 二極管(射頻、小信號、開關(guān)、功率) |
| 英文描述： | 0.5 A, 100 V, SILICON, SIGNAL DIODE, DO-15 |
| 封裝： | LEAD FREE, DO-15, PLASTIC, 2 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 93K |
| 代理商： | S5295B |
S5295B,S5295G,S5295J
2006-11-07
1
TOSHIBA Fast Recovery Diode
Silicon Diffused Type
S5295B,S5295G,S5295J
High Speed Rectifier Applications (fast recovery)
Average Forward Current: IF (AV) = 0.5 A (Ta = 50°C)
Repetitive Peak Reverse Voltage: VRRM = 100, 400, 600 V
Reverse Recovery Time: 1.5 s
Plastic Mold Type.
Absolute Maximum Ratings
Characteristics
Symbol
Rating
Unit
S5295B
100
S5295G
400
Repetitive peak
reverse voltage
S5295J
VRRM
600
V
S5295B
75
S5295G
300
Reverse voltage
(DC)
S5295J
VR
500
V
Average forward current (Ta
= 50°C)
IF (AV)
0.5
A
30 (50 Hz)
Peak one cycle surge forward current
(non repetitive)
IFSM
33 (60 Hz)
A
Junction temparature
Tj
40 to 125
°C
Storage temparature range
Tstg
40 to 125
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Electrical Characteristics (Ta
= 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Peak forward voltage
VFM
IFM = 1.0 A
1.5
V
Repetitive peak reverse current
IRRM
VRRM = Rated
10
A
Reverse recovery time
trr
IF = 20 mA, IR = 1 mA
1.5
s
Forward recovery voltage
Vfr
IF = 100 mA, tr = 100 ns, tw = 5 s
10
V
Note 1: Soldering: 5 mm is the minimum to be kept between case and soldering part.
Note 2: Lead bending: 5 mm is the minimum to be kept from the case when bend the lead wire.
Unit: mm
JEDEC
DO-15
JEITA
SC-39
TOSHIBA
3-3B1A
Weight: 0.42 g (typ.)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S5295JTPA1 | 0.5 A, 600 V, SILICON, SIGNAL DIODE |
| S5566B | 1 A, 100 V, SILICON, SIGNAL DIODE |
| S5566GTPB2 | 1 A, 400 V, SILICON, SIGNAL DIODE |
| S5566JTPA3 | 1 A, 600 V, SILICON, SIGNAL DIODE |
| S5688BTPA2 | 1 A, 100 V, SILICON, SIGNAL DIODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S5295B(Q) | 制造商:Toshiba 功能描述:Diode Switching 100V 0.5A 2-Pin DO-15 制造商:Toshiba 功能描述:Diode Switching 100V 0.5A 2-Pin DO-15 Bulk |
| S5295G | 制造商:Toshiba America Electronic Components 功能描述: |
| S5295J | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:High Speed Rectifier Applications (fast recovery) |
| S5296A2NRF-OW | 制造商:TYAN 功能描述:SCRAP/OUT OF WARRANTY - Bulk |
| S5297WAG2NRF-DF | 制造商:TYAN 功能描述:- Bulk |
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