參數(shù)資料
型號(hào): S5277B
元件分類: 參考電壓二極管
英文描述: 1 A, 100 V, SILICON, SIGNAL DIODE
封裝: LEAD FREE, 3-3C1A, 2 PIN
文件頁(yè)數(shù): 1/4頁(yè)
文件大?。?/td> 119K
代理商: S5277B
S5277B,S5277G,S5277J,S5277N
2006-11-06
1
TOSHIBA Rectifier Silicon Diffused Type
S5277B, S5277G, S5277J, S5277N
General Purpose Rectifier Applications
Average Forward Current: I
F (AV)
= 1.0 A
Repetitive Peak Reverse Voltage: V
RRM
= 100~1000 V
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Symbol
Rating
Unit
S5277B
100
S5277G
400
S5277J
600
Repetitive peak reverse
voltage
S5277N
V
RRM
1000
V
Average forward current
I
F (AV)
1.0
A
S5277B
S5277G
50 (50 Hz)
55 (60 Hz)
Peak one cycle surge
forward current
(non repetitive)
S5277J
S5277N
I
FSM
30 (50 Hz)
33 (60 Hz)
A
Junction temparature
T
j
40~150
°C
Storage temparature range
T
stg
40~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Peak forward voltage
V
FM
I
FM
=
1.0 A
1.2
V
Repetitive peak reverse current
I
RRM
V
RRM
=
Rated
10
μ
A
Thermal resistance (junction to ambient)
R
th
(j-a)
DC
120
°C/W
Marking
Abbreviation Code
Part No.
77B
S5277B
77G
S5277G
77J
S5277J
77N
S5277N
Unit: mm
JEDEC
JEITA
TOSHIBA
3-3C1A
Weight: 0.3 g (typ.)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
7
G
Part No. (or abbreviation code)
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