- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄365427 > S524C20D11 (SAMSUNG SEMICONDUCTOR CO. LTD.) 1K/2K/4K/8K-bit Serial EEPROM PDF資料下載
參數(shù)資料
| 型號： | S524C20D11 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 元件分類： | EEPROM |
| 英文描述： | 1K/2K/4K/8K-bit Serial EEPROM |
| 中文描述： | 1K/2K/4K/8K-bit串行EEPROM |
| 文件頁數(shù)： | 1/22頁 |
| 文件大小： | 152K |
| 代理商： | S524C20D11 |
S524C20D10/20D20/80D40/80D80
1K/2K/4K/8K-bit
Serial EEPROM
with software write protect
Data Sheet
4-1
OVERVIEW
The S524C20D10/20D20/80D40/80D80 serial EEPROM has a 1,024/2,048/4,096/8,192-bit (128/256/512/1,024-
byte) capacity, supporting the standard I
2
C-bus serial interface. It is fabricated using Samsung’s most
advanced CMOS technology. Important features are a hardware-based write protection circuit for the entire
memory area and software-based write protection logic for the lower 128 bytes. Hardware-based write protection
is controlled by the state of the write-protect (WP) pin. The software-based method is one-time programmable
and permanent. Using one-page write mode, you can load up to 16 bytes of data into the EEPROM in a single
write operation. Another significant feature of the S524C20D10/20D20/80D40/80D80 is its support for fast mode
and standard mode.
FEATURES
I
2
C-Bus Interface
Two-wire serial interface
Automatic word address increment
EEPROM
1K/2K/4K/8K-bit (128/256/512/1,024-byte)
storage area
16-byte page buffer
Typical 3.5 ms write cycle time with
auto-erase function
Hardware-based write protection for the entire
EEPROM (using the WP pin)
Software-based write protection for the lower
128-byte EEPROM
EEPROM programming voltage generated
on chip
1,000,000 erase/write cycles
100 years data retention
Operating Characteristics
Operating voltage
— 2.5 V to 5.5 V (write)
— 2.2 V to 5.5 V (read)
Operating current
— Maximum write current: < 3 mA at 5.5 V
— Maximum read current: < 200
μ
A at 5.5 V
— Maximum stand-by current: < 5
μ
A at 3.3 V
Operating temperature range
— – 25°C to + 70°C (commercial)
— – 40°C to + 85°C (industrial)
Operating clock frequencies
— 100 kHz at standard mode
— 400 kHz at fast mode
Electrostatic discharge (ESD)
— 3,000 V (HBM)
— 300 V (MM)
Packages
8-pin DIP, SOP, and TSSOP
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S524C20D20 | 1K/2K/4K/8K-bit Serial EEPROM with software write protect |
| S524C20D21 | 1K/2K/4K/8K-bit Serial EEPROM |
| S524L50X51 | 16K-bit Serial EEPROM |
| S524L50D51 | 16K-bit Serial EEPROM |
| S525T | N-Channel MOS-Fieldeffect Triode, Depletion Mode |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S524C20D20 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1K/2K/4K/8K-bit Serial EEPROM with software write protect |
| S524C20D21 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1K/2K/4K/8K-bit Serial EEPROM |
| S524C80D40 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1K/2K/4K/8K-bit Serial EEPROM with software write protect |
| S524C80D41 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1K/2K/4K/8K-bit Serial EEPROM |
| S524C80D80 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1K/2K/4K/8K-bit Serial EEPROM with software write protect |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。