參數(shù)資料
型號: S524AD0XF1
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 128K/256K-bit Serial EEPROM for Low Power
中文描述: 128K/256K-bit串行EEPROM的低功耗
文件頁數(shù): 11/16頁
文件大?。?/td> 123K
代理商: S524AD0XF1
DATA SHEET
S524AD0XD1/D0XF1 SERIAL EEPROM
8-11
HARDWARE-BASED WRITE PROTECTION
You can also write-protect the entire memory area of the S524AD0XD1/D0XF1. This write protection is controlled
by the state of the Write Protect (WP) pin.
When the WP pin is connected to V
CC
, any attempt to write a value to it is ignored. The S524AD0XD1/D0XF1 will
acknowledge slave address, word address, and data bytes. But the write cycle will not be started when a stop
condition is generated. By connecting the WP pin to V
SS
, the write function is allowed for the entire memory.
These write protection features effectively change the EEPROM to a ROM in order to protect data from being
overwritten.
CURRENT ADDRESS BYTE READ OPERATION
The internal word address pointer maintains the address of the last word accessed, incremented by one.
Therefore, if the last access (either read or write) was to the address “n”, the next read operation would be to
access data at address “n+1”.
When the S524AD0XD1/D0XF1 receives a slave address with the R
/
W
bit set to “1”, it issues an ACK and sends
the eight bits of data. In a current address byte read operation, the master does not acknowledge the data, and it
generates a stop condition, forcing the S524AD0XD1/D0XF1 to stop the transmission (see Figure 8-13).
Slave Address
Data
Start
A
C
K
Stop
N
O
A
C
K
Figure 8-13. Current Address Byte Read Operation
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