參數(shù)資料
型號: S524A60X51
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 1K/2K/4K/8K/16K-bit Serial EEPROM for Low Power
中文描述: 1K/2K/4K/8K/16K-bit串行EEPROM的低功耗
文件頁數(shù): 1/16頁
文件大?。?/td> 124K
代理商: S524A60X51
S524A40X11/40X21/
40X41/60X81/60X51
1K/2K/4K/8K/16K-bit
Serial EEPROM for Low Power
Data Sheet
1-1
OVERVIEW
The S524A40X11/40X21/40X41/60X81/60X51 serial EEPROM has a 1,024/2,048/4,096/8,192/16,384-bit
capacity, supporting the standard I
2
C-bus serial interface. It is fabricated using Samsung’s most advanced
CMOS technology. It has been developed for low power and low voltage applications (1.8 V to 5.5 V). One of its
major feature is a hardware-based write protection circuit for the entire memory area. Hardware-based write
protection is controlled by the state of the write-protect (WP) pin. Using one-page write mode, you can load up to
16 bytes of data into the EEPROM in a single write operation. Another significant feature of the
S524A40X11/40X21/40X41/60X81/60X51 is its support for fast mode and standard mode.
FEATURES
I
2
C-Bus Interface
Two-wire serial interface
Automatic word address increment
EEPROM
1K/2K/4K/8K/16K-bit
(128/256/512/1,024/2,048-byte) storage area
16-byte page buffer
Typical 3 ms write cycle time with
auto-erase function
Hardware-based write protection for the entire
EEPROM (using the WP pin)
EEPROM programming voltage generated
on chip
1,000,000 erase/write cycles
100 years data retention
Operating Characteristics
Operating voltage
— 1.8 V to 5.5 V
Operating current
— Maximum write current: < 3 mA at 5.5 V
— Maximum read current: < 200
μ
A at 5.5 V
— Maximum stand-by current: < 1
μ
A at 5.5 V
Operating temperature range
— – 25°C to + 70°C (commercial)
— – 40°C to + 85°C (industrial)
Operating clock frequencies
— 100 kHz at standard mode
— 400 kHz at fast mode
Electrostatic discharge (ESD)
— 5,000 V (HBM)
— 500 V (MM)
Packages
8-pin DIP, SOP, and TSSOP
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