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參數(shù)資料
| 型號(hào)： | S524A40X20 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 1K/2K/4K-bit Serial EEPROM for Low Power with software write protect |
| 中文描述： | 1K/2K/4K-bit的低功耗串行EEPROM與軟件寫(xiě)保護(hù) |
| 文件頁(yè)數(shù)： | 1/18頁(yè) |
| 文件大?。?/td> | 132K |
| 代理商： | S524A40X20 |
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S524A40X10/40X20/40X40
1K/2K/4K-bit
Serial EEPROM for Low Power
with software write protect
Data Sheet
2-1
OVERVIEW
The S524A40X10/40X20/40X40 serial EEPROM has a 1,024/2,048/4,096-bit (128/256/512-byte) capacity,
supporting the standard I
2
C-bus serial interface. It is fabricated using Samsung’s most advanced CMOS
technology. It has been developed for low power and low voltage applications (1.8 V to 5.5 V). Important features
are a hardware-based write protection circuit for the entire memory area and software-based write protection logic
for the lower 128 bytes. Hardware-based write protection is controlled by the state of the write-protect (WP) pin.
The software-based method is one-time programmable and permanent. Using one-page write mode, you can
load up to 16 bytes of data into the EEPROM in a single write operation. Another significant feature of the
S524A40X10/40X20/40X40 is its support for fast mode and standard mode.
FEATURES
I
2
C-Bus Interface
Two-wire serial interface
Automatic word address increment
EEPROM
1K/2K/4K-bit (128/256/512-byte) storage area
16-byte page buffer
Typical 3 ms write cycle time with
auto-erase function
Hardware-based write protection for the entire
EEPROM (using the WP pin)
Software-based write protection for the lower
128-byte EEPROM
EEPROM programming voltage generated
on chip
1,000,000 erase/write cycles
100 years data retention
Operating Characteristics
Operating voltage
— 1.8 V to 5.5 V
Operating current
— Maximum write current: < 3 mA at 5.5 V
— Maximum read current: < 200
μ
A at 5.5 V
— Maximum stand-by current: < 1
μ
A at 5.5 V
Operating temperature range
— – 25°C to + 70°C (commercial)
— – 40°C to + 85°C (industrial)
Operating clock frequencies
— 100 kHz at standard mode
— 400 kHz at fast mode
Electrostatic discharge (ESD)
— 5,000 V (HBM)
— 500 V (MM)
Packages
8-pin DIP, SOP, and TSSOP
相關(guān)PDF資料 |
PDF描述 |
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| S524A40X21 | 1K/2K/4K/8K/16K-bit Serial EEPROM for Low Power |
| S524A40X11 | 1K/2K/4K/8K/16K-bit Serial EEPROM for Low Power |
| S524A40X10 | 1K/2K/4K-bit Serial EEPROM for Low Power with software write protect |
| S524A40X40 | 1K/2K/4K-bit Serial EEPROM for Low Power with software write protect |
| S524A40X41 | 1K/2K/4K/8K/16K-bit Serial EEPROM for Low Power |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S524A40X21 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1K/2K/4K/8K/16K-bit Serial EEPROM for Low Power |
| S524A40X40 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1K/2K/4K-bit Serial EEPROM for Low Power with software write protect |
| S524A40X41 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1K/2K/4K/8K/16K-bit Serial EEPROM for Low Power |
| S524A60X51 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1K/2K/4K/8K/16K-bit Serial EEPROM for Low Power |
| S524A60X81 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1K/2K/4K/8K/16K-bit Serial EEPROM for Low Power |
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