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參數(shù)資料
| 型號(hào)： | S4707-01 |
| 廠(chǎng)商： | Hamamatsu Photonics |
| 英文描述： | MOSFET, Switching; VDSS (V): 600; ID (A): 21; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.315; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2600; toff (µs) typ: 0.107; Package: TO-3P |
| 中文描述： | 硅PIN光電二極管 |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大?。?/td> | 92K |
| 代理商： | S4707-01 |
Si PIN photodiode
S4707-01
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho,
Higashi-ku,
Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.:
19
, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesv
gen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 2004 Hamamatsu Photonics K.K.
Cat. No. KPIN1070E01
May
2004 DN
4.6 ± 0.2
(INCLUDING BURR)
4.5 *
5
(
5
(
×
)
(
×
)
5
PHOTOSENSITIVE
SURFACE
0.7
1.0
2.0
NC
CATHODE
ANODE
CATHODE
(2
×
) 5
5.75 ± 0.2
(2
×
) 3
Tolerance unless otherwise
noted: ±0.1, ±2
Shaded area indicates burr.
Chip position accuracy with respect to
the package dimensions marked *
X, Y
≤
±0.2,
θ≤
±2
2
(
×
)
(
×
)
(4
×
) 0.25
(4
×
) 7.5 ± 5
(
×
)
2
I
Spectral response
KPINB0299EA
I
Dark current vs. reverse voltage
KPINB0300EA
I
Terminal capacitance vs. reverse voltage
KPINB0301EA
200
WAVELENGTH (nm)
P
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
400
800
1000
1200
(Typ. Ta=25
C)
QE=100 %
0.01
REVERSE VOLTAGE (V)
D
10 pA
100 pA
1 nA
0.1
1
10
100
(Typ. Ta=25
C)
0.1
REVERSE VOLTAGE (V)
T
1 pF
100 pF
10 pF
1 nF
1
10
100
(Typ. Ta=25
C)
I
Dimensional outline (unit: mm)
KPINA0099EA
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