參數(shù)資料
型號(hào)： S4204
廠商： Hamamatsu Photonics
英文描述： Si PIN photodiode Dual-element, plastic package photodiode
中文描述： 硅PIN光電二極管雙元件，塑料封裝二極管
文件頁(yè)數(shù)： 3/3頁(yè)
文件大?。?/td> 116K
代理商： S4204
Si PIN photodiode
S2721-02, S3096-02, S4204, S8703
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho,
Higashi-ku,
Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.:
19
, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesv
gen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 2003 Hamamatsu Photonics K.K.
Cat. No. KMPD1039E03
Dec. 2003 DN
Shaded area indicates burr.
Chip position accuracy with respect
to the package dimensions marked *
X, Y
≤
±0.2
θ≤
±2
1.8
0.
5
1
5
ANODE a
CATHODE COMMON
ANODE b
5.0 MAX.
(INCLUDING BURR)
4.7 *
0.5
2.0
DEPTH 0.15 MAX.
ACTIVE AREA
PHOTOSENSITIVE
SURFACE
5.0 MAX.
(INCLUDING BURR)
4.7 *
10
4.8 *
5
4
(
(
(
4
4
0.4
1.27
1.27
0.8
0.25
DETAILS OF
PHOTODIODE
0.02
2.0
1
b
a
4.6 ± 0.2
(INCLUDING BURR)
ACTIVE AREA
Chip position accuracy with respect
to the package dimensions marked *
X, Y
±0.2
θ
≤
±2
0
0
2
(0.8)
(1.0)
5.0 ± 0.4
4.5 *
(1.0)
(0.8)
5.0 ± 0.4
14.5 ± 0.3
PHOTOSENSITIVE
5
0
3
0
1
2
5
(
5
3
1
DETAILS OF
PHOTODIODE
3
0.005
1.0
5
a
b
ANODE a
CATHODE COMMON
ANODE b
CATHODE COMMON
ACTIVE AREA
4.1 ± 0.2
(INCLUDING BURR)
0
2
2
(0.8)
(1.25)
4.9 ± 0.4
4.0 *
(1.25)
(0.8)
13.8 ± 0.3
4.9 ± 0.4
5
0
10
0
0
1
5
(
4
4
5
1
DETAILS OF
PHOTODIODE
1.0
0
0
PHOTOSENSITIVE
a
b
Chip position accuracy with respect
to the package dimensions marked *
X, Y
≤
±0.2
θ
≤
±2
ANODE a
CATHODE COMMON
ANODE b
CATHODE COMMON
ACTIVE AREA
4.1 ± 0.2
(INCLUDING BURR)
0
2
5.2 ± 0.2
4.0 *
0.8
0.25
4
PHOTOSENSITIVE
5
10
5
(
4
4
DETAILS OF
PHOTODIODE
3
1.2
0
7.5
± 5
1.8
0
0
a
b
1
5
Chip position accuracy with respect
to the package dimensions marked *
X, Y
≤
±0.2
θ
≤
±2
ANODE a
CATHODE COMMON
ANODE b
CATHODE COMMON
KMPDA0118EA
I
Dimensional outlines (unit: mm, tolerance unless
otherwise noted: ±0.1)
KMPDA0119EA
KMPDA0120EA
S2721-02
S4204
S3096-02
KMPDA0181EA
S8703
3
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