參數(shù)資料
型號： S3M
廠商： GE Security, Inc.
英文描述： SURFACE MOUNT RECTIFIER
中文描述： 表面貼裝整流
文件頁數(shù)： 1/2頁
文件大?。?/td> 85K
代理商： S3M
S3A THRU S3M
SURFACE MOUNT RECTIFIER
Reverse Voltage -
50 to 1000 Volts
Forward Current -
3.0 Amperes
FEATURES
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
For surface mount applications
Low profile package
Built-in strain relief,
ideal for automated placement
Glass passivated chip junction
High temperature soldering:
260°C/10 seconds at terminals
MECHANICAL DATA
Case:
JEDEC DO-214AB molded plastic body over
passivated chip
Terminals:
Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity:
Color band denotes cathode end
Weight:
0.007 ounce, 0.25 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOLS
S3A
S3B
S3D
S3G
S3J
S3K
S3M
UNITS
Device marking code
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at T
L
=75°C
(NOTE 3)
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method) T
L
=75°C
Maximum instantaneous forward voltage at 2.5A
Maximum DC reverse current
at rated DC blocking voltage
Typical reverse recovery time
(NOTE 1)
Typical junction capacitance
(NOTE 2)
Typical thermal resistance
(NOTE 3)
SA
SB
SD
SG
SJ
SK
SM
V
RRM
V
RMS
V
DC
50
35
50
100
70
100
200
140
200
400
280
400
600
420
600
800
560
800
1000
700
1000
Volts
Volts
Volts
I
(AV)
3.0
Amps
I
FSM
100.0
Amps
V
F
1.15
10.0
250.0
2.5
60.0
47.0
13.0
Volts
T
A
=25°C
T
A
=125°C
I
R
μ
A
t
rr
C
J
R
Θ
JA
R
Θ
JL
T
J
, T
STG
μ
s
pF
°C/W
Operating junction and storage temperature range
-55 to +150
°C
NOTES:
(1) Reverse recovery test conditions: I
F
=0.5A, I
R
=1.0A, I
rr
=0.25A
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts
(3) Thermal resistance from junction to ambient and from junction to lead mounted on
P.C.B. with 0.3 x 0.3” (8.0 x 8.0mm) copper pad areas
4/98
0.006 (0.152)
0.012 (0.305)
0.030 (0.76)
0.060 (1.52)
0.008 (0.203)
MAX.
0.305 (7.75)
0.320 (8.13)
0.260 (6.60)
0.280 (7.11)
0.079 (2.06)
0.103 (2.62)
0.220 (5.59)
0.245 (6.22)
0.126 (3.20)
0.114 (2.90)
DO-214AB
MODIFIED J-BEND
Dimensions in inches and (millimeters)
相關(guān)PDF資料
PDF描述
S6000D High Voltage, Medium Current Silicon Controlled Rectifiers
S6000M High Voltage, Medium Current Silicon Controlled Rectifiers
S6000N High Voltage, Medium Current Silicon Controlled Rectifiers
SA1203I Dual-channel 12-bit 40Msps 215mW A/D converter
SA15 TransZorb Transient Voltage Suppressor(TransZorb瞬變電壓抑制器)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S3M R6 制造商:SKMI/Taiwan 功能描述:Diode Switching 1KV 3A 2-Pin SMC T/R
S3M 制造商:Fairchild Semiconductor Corporation 功能描述:DIODE SMD 3A 1000V
S3M/1T 功能描述:整流器 3.0 Amp 1000 Volt 100 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
S3M/51T 功能描述:整流器 3.0 Amp 1000 Volt 100 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
S3M/57T 功能描述:整流器 Vr/1000V Io/3A T/R RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*