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參數(shù)資料
| 型號： | S3BHE3/9AT |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-214AB |
| 封裝： | ROHS COMPLIANT, PLASTIC, SMC, 2 PIN |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 79K |
| 代理商： | S3BHE3/9AT |
S3A thru S3M
Vishay General Semiconductor
Document Number: 88713
Revision: 08-Apr-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 4. Typical Reverse Characteristics
0.6
0.7
10
100
0.8
0.9
1.1
1.2
1.3
0.01
0.1
1
1.0
Instantaneous Forward Voltage (V)
Instantaneo
u
s
For
w
ard
C
u
rrent
(A)
T
J = 25 °C
Pulse Width = 300 s
1 % Duty Cycle
0
20
40
60
80
100
0.1
1
10
100
T
J = 125 °C
T
J = 25 °C
Percent of Rated Peak Reverse Voltage (%)
Instantaneo
u
s
Re
v
erse
C
u
rrent
(
A)
Figure 5. Typical Junction Capacitance
Figure 6. Typical Transient Thermal Impedance
10
100
1
10
100
Reverse Voltage (V)
J
u
nction
Capacitance
(pF)
T
J = 25 °C
f = 1.0 MHz
V
sig = 50 mVp-p
0.01
0.1
1
10
100
0.1
1
10
100
Mounted on 0.20 x 0.27" (5 x 7 mm)
Copper Pad Areas
t - Pulse Duration (s)
T
ransient
Ther
mal
Impedance
(°C/
W
)
0.260 (6.60)
0.280 (7.11)
0.006 (0.152)
0.012 (0.305)
0.030 (0.76)
0.060 (1.52)
0.008 (0.2)
0.305 (7.75)
0.320 (8.13)
0.220 (5.59)
0.246 (6.22)
0.079 (2.06)
0.103 (2.62)
0.114 (2.90)
0.126 (3.20)
Cathode Band
DO-214AB (SMC)
0.185 (4.69)
MAX.
0.320 REF.
0.126 (3.20)
MIN.
0.060 (1.52)
MIN.
Mounting Pad Layout
0 (0)
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