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參數(shù)資料
| 型號： | S3590-09 |
| 廠商： | Hamamatsu Photonics |
| 英文描述： | Si PIN photodiode Large area sensors for scintillation detection |
| 中文描述： | 硅PIN光電二極管的大面積閃爍探測傳感器 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 102K |
| 代理商： | S3590-09 |
Si PIN photodiode
S3590-08/-09
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 2007 Hamamatsu Photonics K.K.
0.45
LEAD
PHOTOSENSITIVE
SURFACE
ACTIVE AREA
5
1.25
1
1
0
1
10.0
WHITE CERAMIC
14.5
1.4
1
+
0
-
0
+
0
-
0.5
The coating resin may extend a
maximum of 0.1 mm beyond the
upper surface of the package.
Cat. No. KPIN1052E06
Oct. 2007 DN
WAVELENGTH (nm)
P
0
200
400
600
0.1
0.2
0.3
0.4
0.5
800
1200
1000
0.6
0.7
(Typ. Ta=25 C)
0
T
%
C
)
200
400
600
800
1000
+1.0
+0.5
(Typ.)
+1.5
-0.5
WAVELENGTH (nm)
REVERSE VOLTAGE
(V)
(Typ. Ta=25
C, f=1 MHz)
T
1
0.1
10 pF
100 pF
10 nF
1 nF
10
100
1000
I
Spectral response
REVERSE VOLTAGE (V)
D
100 pA0.1
1
10
1000
100
1 nA
10 nA
100 nA
(Typ. Ta=25
C)
10 nA
1
μ
A
10 pA
100 pA
1 nA
100 nA
D
(Typ. V
R
=70 V)
AMBIENT TEMPERATURE
(
C)
0
60
80
20
40
I
Dimensional outline (unit: mm)
I
Photo sensitivity temperature
characteristic
I
Dark current vs. reverse voltage
I
Dark current vs. ambient temperature
I
Terminal capacitance vs.
reverse voltage
KPINB0231EB
KPINB0093ED
KPINB0233ED
KPINB0232EC
KPINB0234EC
KPINA0014EF
KPINB0263EB
WAVELENGTH (nm)
P
0
200
400
600
0.1
0.2
0.3
0.4
0.5
800
1200
1000
0.6
0.7
(Typ. Ta=25
C)
QE
=100 %
2
S3590-09
S3590-08
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