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參數(shù)資料
| 型號： | S3590-08 |
| 廠商： | Hamamatsu Photonics |
| 英文描述： | Si PIN photodiode Large area sensors for scintillation detection |
| 中文描述： | 硅PIN光電二極管的大面積閃爍探測傳感器 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 102K |
| 代理商： | S3590-08 |
Features
l
Higher sensitivity and low dark current than conventional type
l
Sensitivity matching with BGO and CsI (TI) scintillators
l
High quantum efficiency: QE=85 % (
λ
=540 nm)
l
Low capacitance
l
High-speed response
l
High stability
l
Good energy resolution
Applications
l
Scintillation detectors
l
Calorimeters
l
Hodoscopes
l
TOF counters
l
Air shower counters
l
Particle detectors, etc.
P H O T O D I O D E
Si PIN photodiode
S3590-08/-09
Large area sensors for scintillation detection
1
I
General ratings / Absolute maximum ratings
Absolute maximum ratings
Power
dissipation
P
(mW)
Active area
Depletion
layer
thickness
Type No.
Window
material
(mm)
(mm)
Reverse
voltage
V
R
Max.
Operating
temperature
Topr
(°C)
Storage
temperature
Tstg
(°C)
S3590-08
S3590-09
Epoxy resin
Window-less
10 × 10
0.3
100
100
-20 to +60
-20 to +80
I
Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
Photo sensitivity
S
Dark
current
I
D
λ
=
λ
p
Type No.
Spectral
response
range
λ
(nm)
320 to
1100
Peak
sensitivity
wavelength
λ
p
(nm)
(A/W)
0.66
0.66
LSO
420 nm
(A/W)
0.20
0.22
BGO
480 nm
(A/W)
0.30
0.33
CsI(Tl)
540 nm
(A/W)
0.36
0.41
Short
circuit
current
Isc
100
lx
(μA)
Typ.
(
nA)
Max.
(nA)
Temp.
coefficient
of I
D
T
CID
(times/°C)
Cut-off
Frequency
fc
(MHz)
Terminal
capacitance
Ct
f= 1MHz
(pF)
NEP
V
R
=70 V
(W/Hz
1/2
)
S3590-08
S3590-09
* V
R
=70 V
960
100
2 *
6 *
1.12
40 *
40 *
3.8 × 10
-14
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S3590-09 | 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:Si PIN photodiode Large area sensors for scintillation detection |
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