參數(shù)資料
型號: S30C90C
廠商: MOSPEC SEMICONDUCTOR CORP.
英文描述: Schottky Barrier Rectifiers
中文描述: 肖特基
文件頁數(shù): 1/2頁
文件大?。?/td> 58K
代理商: S30C90C
MOSPEC
S30C90/100C
Schottky Barrier Rectifiers
Using the Schottky Barrier principle with a Molybdenum barrier metal.
These state-of-the-art geometry features epitaxial construction with oxide
passivation and metal overlay contact. Ideally suited for low voltage, high
frequency rectification, or as free wheeling and polarity protection diodes.
Low Forward Voltage.
Low Switching noise.
High Current Capacity
Guarantee Reverse Avalanche.
Guard-Ring for Stress Protection.
Low Power Loss & High efficiency.
125
Operating Junction Temperature
Low Stored Charge Majority Carrier Conduction.
Plastic Material used Carries Underwriters Laboratory
Flammability Classification 94V-O
MAXIMUM RATINGS
Characteristic
Symbol
S30C90C
S30C100C
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
90
100
V
RMS Reverse Voltage
V
R(RMS)
63
70
V
Average Rectifier Forward Current
Total Device (Rated V
R
), T
C
=100
I
F(AV)
15
30
A
Peak Repetitive Forward Current
(Rate V
R
, Square Wave, 20kHz)
I
FM
30
A
Non-Repetitive Peak Surge Current (Surge
applied at rate load conditions half-wave,
single phase, 60Hz)
I
FSM
250
A
Operating and Storage Junction Temperature
Range
T
J
, T
stg
-65 to +125
SCHOTTKY BARRIER
RECTIFIERS
30 AMPERES
90, 100 VOLTS
TO-220AB
MILLIMETERS
MIN
14.68
9.78
5.02
13.06
3.57
2.42
1.12
0.72
4.22
1.14
2.20
0.33
2.48
3.70
DIM
MAX
15.32
10.42
6.52
14.62
4.07
2.66
1.36
0.96
4.98
1.38
2.98
0.55
2.98
3.90
A
B
C
D
E
F
G
H
I
J
K
L
M
O
Common cathode
Suffix “C”
ELECTRIAL CHARACTERISTICS
Characteristic
Symbol
S30C90C
S30C100C
Unit
Maximum Instantaneous Forward Voltage
( I
F
=15 Amp T
C
= 25
( I
F
=15 Amp T
C
= 125
)
)
V
F
0.85
0.75
V
Maximum Instantaneous Reverse Current
( Rated DC Voltage, T
C
= 25
( Rated DC Voltage, T
C
= 125
)
)
I
R
0.5
30
mA
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