- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄40039 > S2MHA (LITE-ON SEMICONDUCTOR CORP) 2 A, 1000 V, SILICON, RECTIFIER DIODE PDF資料下載
參數(shù)資料
| 型號： | S2MHA |
| 廠商： | LITE-ON SEMICONDUCTOR CORP |
| 元件分類： | 整流器 |
| 英文描述： | 2 A, 1000 V, SILICON, RECTIFIER DIODE |
| 封裝： | PLASTIC, SMA, 2 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 128K |
| 代理商： | S2MHA |
S2GHA thru S2MHA
SURFACE MOUNT
GLASS PASSIVATED RECTIFIER
REVERSE VOLTAGE – 400 to 1000 Volts
FORWARD CURRENT – 2.0 Ampere
FEATURES
Glass passivated chip
For surface mounted applications
Low reverse leakage current
Low forward voltage drop
High current capability
MECHANICAL DATA
Case: Molded plastic
Polarity: Indicated by cathode band
Terminals: Solder plated copper
Weight: 0.002 ounce, 0.064 grams
SMA
DIM. MIN. MAX.
A
4.06
4.57
B
2.29
2.92
C
1.27
1.63
D
0.15
0.31
E
4.83
5.59
F
0.05
0.20
G
2.01
2.40
H
0.76
1.52
All dimension in millimeter
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
PARAMETER
SYMBOL
S2GHA
S2JHA
S2KHA
S2MHA
UNIT
Device marking code
Note
S2GHA
S2JHA
S2KHA
S2MHA
---
Maximum Repetitive Peak Reverse Voltage
VRRM
400
600
800
1000
V
Maximum RMS Voltage
VRMS
280
420
560
700
V
Maximum DC Blocking Voltage
VDC
400
600
800
1000
V
Average Rectified Output Current
@TL=90°C
I(AV)
2.0
A
Peak Forward Surge Current 8.3ms single half
sine-wave
IFSM
50
A
Operating junction temperature range
TJ
-55 to +150
°C
Storage temperature range
TSTG
-55 to +150
°C
PARAMETER
TEST CONDITIONS
SYMBOL
Max.
UNIT
Forward Voltage (1)
IF=2.0A
Tj=25°C
VF
1.15
V
Leakage Current (1)
VR=VDC
Tj=25°C
Tj=125°C
IR
5
125
uA
THERMAL CHARACTERISTIC
SYMBOL
Typical
UNIT
Typical junction capacitance (2)
CJ
10
pF
Typical thermal resistance _ Junction to Case (3)
RΘJC
21
°C/W
Typical thermal resistance _ Junction to Ambient (3)
RΘJA
58
°C/W
Typical thermal resistance _ Junction to Lead (3)
RΘJL
33
°C/W
Note :
REV. 0, Apr-2010, KSDA05
(1)
300us Pulse width, 2% Duty cycle.
(2)
Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
(3)
Thermal Resistance test performed in accordance with JESD-51. Unit mounted on 0.75t glass-epoxy substrate with 10mmx10mm
copper pad. RΘJL is measured at the lead of cathode band,
RΘJC is measured at the top centre of body.
相關PDF資料 |
PDF描述 |
|---|---|
| S2JHA | 2 A, 600 V, SILICON, RECTIFIER DIODE |
| S2V204002P5 | 1.7 A, SILICON, RECTIFIER DIODE |
| S2VB604001L15 | 2 A, SILICON, BRIDGE RECTIFIER DIODE |
| S2VB604001L20 | 2 A, SILICON, BRIDGE RECTIFIER DIODE |
| S30045T03C | 30 A, SILICON, RECTIFIER DIODE, TO-3 |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| S2MHE3/2CT | 功能描述:整流器 1.5 Amp 1000 Volt 50 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| S2MHE3/52T | 功能描述:整流器 1.5 Amp 1000 Volt 50 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| S2MHE3/55T | 功能描述:整流器 1.5 Amp 1000 Volt 50 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| S2MHE3/5BT | 功能描述:整流器 1.5 Amp 1000 Volt 50 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| S2MIJ | 制造商:Pentair Technical Products / Hoffman 功能描述:Intmed Joint #101.5300.047 , 12.68x8.03x4.33, Aluminum 制造商:PENTAIR TECNICAL PRODCUTS 功能描述:Intmed Joint #101.5300.047 |
發(fā)布緊急采購，3分鐘左右您將得到回復。