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參數(shù)資料
| 型號(hào)： | S29PL129N65GAWW02 |
| 廠商： | SPANSION LLC |
| 元件分類： | DRAM |
| 英文描述： | 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory |
| 中文描述： | 8M X 16 FLASH 3V PROM, 65 ns, PBGA64 |
| 封裝： | 8 X 11.60 MM, LEAD FREE, FBGA-84 |
| 文件頁(yè)數(shù)： | 34/74頁(yè) |
| 文件大?。?/td> | 1968K |
| 代理商： | S29PL129N65GAWW02 |
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34
S29PL-N MirrorBit
Flash Family
S29PL-N_00_A5 June 6, 2007
D a t a
S h e e t
( P r e l i m i n a r y )
7.4.6
Program Suspend/Program Resume Commands
The Program Suspend command allows the system to interrupt an embedded programming operation or a
Write to Buffer
programming operation so that data can read from any non-suspended sector. When the
Program Suspend command is written during a programming process, the device halts the programming
operation within t
PSL
(program suspend latency) and updates the status bits.
After the programming operation has been suspended, the system can read array data from any non-
suspended sector. The Program Suspend command can also be issued during a programming operation
while an erase is suspended. In this case, data can be read from any addresses not in Erase Suspend or
Program Suspend. If a read is needed from the Secured Silicon Sector area, then user must use the proper
command sequences to enter and exit this region.
The system can also write the Autoselect command sequence when the device is in Program Suspend mode.
The device allows reading Autoselect codes in the suspended sectors, since the codes are not stored in the
memory array. When the device exits the Autoselect mode, the device reverts to Program Suspend mode,
and is ready for another valid operation. See
Autoselect
on page 23
for more information.
After the Program Resume command is written, the device reverts to programming. The system can
determine the status of the program operation using the DQ7 or DQ6 status bits, just as in the standard
program operation. See
Write Operation Status
on page 37
for more information.
The system must write the Program Resume command (address bits are
don't cares
) to exit the Program
Suspend mode and continue the programming operation. Further writes of the Program Resume command
are ignored. Another Program Suspend command can be written after the device has resumed programming.
Software Functions and Sample Code
The following is a C source code example of using the program suspend function. Refer to the
Spansion Low
Level Driver User’s Guide
(available on
www.spansion.com
) for general information on Spansion Flash
memory software development guidelines.
/* Example: Program suspend command */
*((UINT16 *)base_addr + 0x000) = 0x00B0; /* write suspend command */
The following is a C source code example of using the program resume function. Refer to the
Spansion Low
Level Driver User’s Guide
(available on
www.spansion.com
) for general information on Spansion Flash
memory software development guidelines.
/* Example: Program resume command */
*((UINT16 *)base_addr + 0x000) = 0x0030; /* write resume command */
Table 7.13
Program Suspend
(LLD Function = lld_ProgramSuspendCmd)
Cycle
Operation
Word Address
Data
1
Write
Bank Address
00B0h
Table 7.14
Program Resume
(LLD Function = lld_ProgramResumeCmd)
Cycle
Operation
Word Address
Data
1
Write
Bank Address
0030h
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S29PL129N65GAWW03 | 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory |
| S29PL129N70GAW000 | 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory |
| S29PL129N70GAW002 | 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory |
| S29PL129N70GAW003 | 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory |
| S29PL129N70GAWW00 | 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29PL129N65GAWW03 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory |
| S29PL129N65GFI000 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory |
| S29PL129N65GFI002 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory |
| S29PL129N65GFI003 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory |
| S29PL129N65GFIW00 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory |
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