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| 型號(hào)： | S29PL-J70BFW012 |
| 廠商： | Spansion Inc. |
| 元件分類： | DRAM |
| 英文描述： | CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control |
| 中文描述： | CMOS 3V電壓供電，同步讀/寫Flash存儲(chǔ)器并有增強(qiáng)VersatileIO控制 |
| 文件頁數(shù)： | 91/96頁 |
| 文件大?。?/td> | 827K |
| 代理商： | S29PL-J70BFW012 |
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September 22, 2006 S29PL-J_00_A9
S29PL-J
89
D a t a
S h e e t
( A d v a n c e
I n f o r m a t i o n )
23.4
VBU056—56-Ball Fine-pitch BGA 7 x 9mm package (PL064J and PL032J)
3440\ 16-038.25 \ 01.13.05
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M-1994.
2. ALL DIMENSIONS ARE IN MILLIMETERS.
3. BALL POSITION DESIGNATION PER JESD 95-1, SPP-010 (EXCEPT
AS NOTED).
4. e REPRESENTS THE SOLDER BALL GRID PITCH.
5. SYMBOL "MD" IS THE BALL ROW MATRIX SIZE IN THE
"D" DIRECTION.
SYMBOL "ME" IS THE BALL COLUMN MATRIX SIZE IN THE
"E" DIRECTION.
N IS THE TOTAL NUMBER OF SOLDER BALLS.
6
DIMENSION "b" IS MEASURED AT THE MAXIMUM BALL
DIAMETER IN A PLANE PARALLEL TO DATUM C.
7
SD AND SE ARE MEASURED WITH RESPECT TO DATUMS
A AND B AND DEFINE THE POSITION OF THE CENTER
SOLDER BALL IN THE OUTER ROW.
WHEN THERE IS AN ODD NUMBER OF SOLDER BALLS IN
THE OUTER ROW PARALLEL TO THE D OR E DIMENSION,
RESPECTIVELY, SD OR SE = 0.000.
WHEN THERE IS AN EVEN NUMBER OF SOLDER BALLS IN
THE OUTER ROW, SD OR SE = e/2
8. NOT USED.
9. "+" INDICATES THE THEORETICAL CENTER OF DEPOPULATED
BALLS.
10 A1 CORNER TO BE IDENTIFIED BY CHAMFER, LASER OR INK
MARK, METALLIZED MARK INDENTATION OR OTHER MEANS.
PACKAGE
VBU 056
JEDEC
N/A
9.00 mm x 7.00 mm NOM
PACKAGE
SYMBOL
MIN
NOM
MAX
NOTE
A
---
---
1.00
OVERALL THICKNESS
A1
0.17
---
---
BALL HEIGHT
A2
0.62
---
0.76
BODY THICKNESS
D
9.00 BSC.
BODY SIZE
E
7.00 BSC.
BODY SIZE
D1
5.60 BSC.
BALL FOOTPRINT
E1
5.60 BSC.
BALL FOOTPRINT
MD
8
ROW MATRIX SIZE D DIRECTION
ME
8
ROW MATRIX SIZE E DIRECTION
N
φ
b
e
56
TOTAL BALL COUNT
0.35
0.40
0.45
BALL DIAMETER
0.80 BSC.
BALL PITCH
SD / SE
0.40 BSC.
SOLDER BALL PLACEMENT
A1,A8,D4,D5,E4,E5,H1,H8
DEPOPULATED SOLDER BALLS
SEATING PLANE
E1
7
SE
D1
e
A
C
D
B
E
F
G
H
7
8
6
5
3
2
1
e
4
A1 CORNER
7
SD
BOTTOM VIEW
C
C
A
D
E
C
0.05
(2X)
C
0.05
B
(2X)
C
10
SIDE VIEW
TOP VIEW
INDEX MARK
A1
A
A2
A1 CORNER
0.10
0.08
B
A
C
M
M C
φ
0.08
φ
0.15
6
NX
φ
b
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|---|---|
| S29PL-J70BFW013 | CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control |
| S29PL-J70BFW020 | CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control |
| S29PL-J70BFW021 | CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control |
| S29PL-J70BFW022 | CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control |
| S29PL-J70BFW023 | CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29PL-J70BFW013 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control |
| S29PL-J70BFW020 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control |
| S29PL-J70BFW021 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control |
| S29PL-J70BFW022 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control |
| S29PL-J70BFW023 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control |
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