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參數(shù)資料
| 型號(hào)： | S29PL-J70BFI013 |
| 廠商： | Spansion Inc. |
| 元件分類： | DRAM |
| 英文描述： | CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control |
| 中文描述： | CMOS 3V電壓供電，同步讀/寫Flash存儲(chǔ)器并有增強(qiáng)VersatileIO控制 |
| 文件頁數(shù)： | 70/96頁 |
| 文件大小： | 827K |
| 代理商： | S29PL-J70BFI013 |
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68
S29PL-J
S29PL-J_00_A9 September 22, 2006
D a t a
S h e e t
( A d v a n c e
I n f o r m a t i o n )
16.7
DQ3: Sector Erase Timer
After writing a sector erase command sequence, the system may read DQ3 to determine whether or not
erasure has begun. (The sector erase timer does not apply to the chip erase command.) If additional sectors
are selected for erasure, the entire time-out also applies after each additional sector erase command. When
the time-out period is complete, DQ3 switches from a “0” to a “1.” See also the
Sector Erase Command
Sequence
on page 59
.
After the sector erase command is written, the system should read the status of DQ7 (Data# Polling) or DQ6
(Toggle Bit I) to ensure that the device has accepted the command sequence, and then read DQ3. If DQ3 is
“1,” the Embedded Erase algorithm has begun; all further commands (except Erase Suspend) are ignored
until the erase operation is complete. If DQ3 is “0,” the device will accept additional sector erase commands.
To ensure the command has been accepted, the system software should check the status of DQ3 prior to and
following each subsequent sector erase command. If DQ3 is high on the second status check, the last
command might not have been accepted.
Table 16.1
shows the status of DQ3 relative to the other status bits.
Notes:
1. DQ5 switches to ‘1’ when an Embedded Program or Embedded Erase operation has exceeded the maximum timing limits. Refer to
DQ5:
Exceeded Timing Limits on page 67
for more information.
2. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for further details.
3. When reading write operation status bits, the system must always provide the bank address where the Embedded Algorithm is in
progress. The device outputs array data if the system addresses a non-busy bank.
Table 16.1
Write Operation Status
Status
DQ7
(Note 2)
DQ6
DQ5
(Note 1)
DQ3
DQ2
(Note 2)
RY/BY#
Standard
Mode
Embedded Program
Algorithm
DQ7#
Toggle
0
N/A
No toggle
0
Embedded Erase
Algorithm
0
Toggle
0
1
Toggle
0
Erase
Suspend
Mode
Erase
Suspend-
Read
Erase
Suspended
Sector
1
No toggle
0
N/A
Toggle
1
Non-Erase
Suspended
Sector
Data
Data
Data
Data
Data
1
Erase-Suspend
-Program
DQ7#
Toggle
0
N/A
N/A
0
Program
Suspend
Mode
(Note 3)
Reading within
Program
Suspended Sector
Invalid
(Not Allowed)
Invalid
(Not Allowed)
Invalid
(Not Allowed)
Invalid
(Not Allowed)
Invalid
(Not Allowed)
1
Reading within
Non-program
Suspended Sector
Data
Data
Data
Data
Data
1
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相關(guān)代理商/技術(shù)參數(shù) |
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| S29PL-J70BFI020 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control |
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| S29PL-J70BFI023 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control |
| S29PL-J70BFW000 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control |
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