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| 型號： | S29PL-J60BAW012 |
| 廠商： | Spansion Inc. |
| 元件分類： | DRAM |
| 英文描述： | CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control |
| 中文描述： | CMOS 3V電壓供電，同步讀/寫Flash存儲器并有增強VersatileIO控制 |
| 文件頁數(shù)： | 85/96頁 |
| 文件大小： | 827K |
| 代理商： | S29PL-J60BAW012 |
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September 22, 2006 S29PL-J_00_A9
S29PL-J
83
D a t a
S h e e t
( A d v a n c e
I n f o r m a t i o n )
21.1
Controlled Erase Operations
Notes
1. Not 100% tested.
2. See
Erase And Programming Performance on page 84
for more information.
Figure 21.3
Alternate CE# Controlled Write (Erase/Program) Operation Timings
Notes
1. Figure indicates last two bus cycles of a program or erase operation.
2. PA = program address, SA = sector address, PD = program data.
3. DQ7# is the complement of the data written to the device. D
OUT
is the data written to the device
4. S29PL129J - During CE1# transitions, CE2# = V
IH
; During CE2# transitions, CE1# = V
IH
5. S29PL129J - There are two CE# (CE1#, CE2#). In the above waveform CE# = CE1# or CE2#
Table 21.2
Alternate CE# Controlled Erase and Program Operations
Parameter
Description (Notes)
Speed Options
60
60
0
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
μs
μs
sec
JEDEC
t
AVAV
t
AVWL
t
ELAX
t
DVEH
t
EHDX
t
GHEL
t
WLEL
t
EHWH
t
ELEH
t
EHEL
t
WHWH1
t
WHWH1
t
WHWH2
Std
t
WC
t
AS
t
AH
t
DS
t
DH
t
GHEL
t
WS
t
WH
t
CP
t
CPH
t
WHWH1
t
WHWH1
t
WHWH2
55
55
65
65
70
70
Write Cycle Time
(Note 1)
Address Setup Time
Address Hold Time
Data Setup Time
Data Hold Time
Read Recovery Time Before Write (OE# High to WE# Low)
WE# Setup Time
WE# Hold Time
CE# (CE1# or CE#2 in PL129J) Pulse Width
CE# (CE1# or CE#2 in PL129J) Pulse Width High
Programming Operation
(Note 2)
Accelerated Programming Operation
(Note 2)
Sector Erase Operation
(Note 2)
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Typ
Typ
Typ
30
25
35
30
0
0
0
0
35
20
40
25
6
4
0.5
t
GHEL
t
WS
OE#
CE#
WE#
RESET#
t
DS
Data
t
AH
Addresses
t
DH
t
CP
DQ7#
D
OUT
t
WC
t
AS
t
CPH
PA
Data# Polling
A0 for program
55 for erase
t
RH
t
WHWH1 or 2
RY/BY#
t
WH
PD for program
30 for sector erase
10 for chip erase
555 for program
2AA for erase
PA for program
SA for sector erase
555 for chip erase
t
BUSY
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相關(guān)代理商/技術(shù)參數(shù) |
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| S29PL-J60BAW013 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control |
| S29PL-J60BAW020 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control |
| S29PL-J60BAW021 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control |
| S29PL-J60BAW022 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control |
| S29PL-J60BAW023 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control |
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