參數資料
    

    


    


    
型號：
S29PL-J55TAI001

    

    
廠商：
Spansion Inc.

    

    
元件分類：
FLASH

    

    
英文描述：
CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control

    

    
中文描述：
CMOS 3V電壓供電，同步讀/寫Flash存儲器并有增強VersatileIO控制

    

    
文件頁數：
3/96頁

    

    
文件大?。?/td>
827K

    

    
代理商：
S29PL-J55TAI001


    

    

    

	
    
    
    

    
    
	
    This document contains information on one or more products under development at Spansion Inc. The information is intended to help you evaluate this product. Do not design in
    this product without contacting the factory. Spansion Inc. reserves the right to change or discontinue work on this proposed product without notice.
    Publication Number
     S29PL-J_00
    Revision
     A
    Amendment
     9
    Issue Date
     September 22, 2006
    Distinctive Characteristics
    Architectural Advantages
     128/128/64/32 Mbit Page Mode devices
    – Page size of 8 words: Fast page read access from random locations 
    within the page
     Single power supply operation
    – Full Voltage range: 2.7 to 3.6 volt read, erase, and program operations 
    for battery-powered applications
     Dual Chip Enable inputs (only in PL129J)
    – Two CE# inputs control selection of each half of the memory space
     Simultaneous Read/Write Operation
    – Data can be continuously read from one bank while executing erase/
    program functions in another bank
    – Zero latency switching from write to read operations
     FlexBank Architecture (PL127J/PL064J/PL032J)
    – 4 separate banks, with up to two simultaneous operations per device
    – Bank A: 
    PL127J -16 Mbit (4 Kw x 8 and 32 Kw x 31)
    PL064J - 8 Mbit (4 Kw x 8 and 32 Kw x 15)
    PL032J - 4 Mbit (4 Kw x 8 and 32 Kw x 7)
    – Bank B: 
    PL127J - 48 Mbit (32 Kw x 96)
    PL064J - 24 Mbit (32 Kw x 48)
    PL032J - 12 Mbit (32 Kw x 24)
    – Bank C: 
    PL127J - 48 Mbit (32 Kw x 96)
    PL064J - 24 Mbit (32 Kw x 48)
    PL032J - 12 Mbit (32 Kw x 24)
    – Bank D: 
    PL127J -16 Mbit (4 Kw x 8 and 32 Kw x 31)
    PL064J - 8 Mbit (4 Kw x 8 and 32 Kw x 15)
    PL032J - 4 Mbit (4 Kw x 8 and 32 Kw x 7)
     FlexBank Architecture (PL129J)
    – 4 separate banks, with up to two simultaneous operations per device
    – CE#1 controlled banks:
    Bank 1A: PL129J - 16Mbit (4Kw x 8 and 32Kw x 31)
    Bank 1B: PL129J - 48Mbit (32Kw x 96)
    – CE#2 controlled banks:
    Bank 2A: PL129J - 48 Mbit (32Kw x 96)
    Bank 2B: PL129J - 16Mbit (4Kw x 8 and 32Kw x 31)
     Enhanced VersatileI/O (V
    ) Control 
    – Output voltage generated and input voltages tolerated on all control 
    inputs and I/Os is determined by the voltage on the V
     pin
    – V
    options at 1.8 V and 3 V I/O for PL127J and PL129J devices
    – 3V V
     for PL064J and PL032J devices
     Secured Silicon Sector region
    – Up to 128 words accessible through a command sequence
    – Up to 64 factory-locked words
    – Up to 64 customer-lockable words
     Both top and bottom boot blocks in one device
     Manufactured on 110 nm process technology
     Data Retention: 20 years typical
     Cycling Endurance: 1 million cycles per sector typical
    Performance Characteristics
     High Performance
    – Page access times as fast as 20 ns
    – Random access times as fast as 55 ns
     Power consumption (typical values at 10 MHz)
    – 45 mA active read current 
    – 17 mA program/erase current
    – 0.2 μA typical standby mode current
    Software Features
     Software command-set compatible with JEDEC 42.4 standard
    – Backward compatible with Am29F, Am29LV, Am29DL, and AM29PDL 
    families and MBM29QM/RM, MBM29LV, MBM29DL, MBM29PDL 
    families
     CFI (Common Flash Interface) compliant 
    – Provides device-specific information to the system, allowing host 
    software to easily reconfigure for different Flash devices
     Erase Suspend / Erase Resume
    – Suspends an erase operation to allow read or program operations in 
    other sectors of same bank
     Program Suspend / Program Resume
    – Suspends a program operation to allow read operation from sectors 
    other than the one being programmed
     Unlock Bypass Program command
    – Reduces overall programming time when issuing multiple program 
    command sequences
    Hardware Features
     Ready/Busy# pin (RY/BY#)
    – Provides a hardware method of detecting program or erase cycle 
    completion
     Hardware reset pin (RESET#)
    – Hardware method to reset the device to reading array data
     WP#/ ACC (Write Protect/Acceleration) input
    – At V
    , hardware level protection for the first and last two 4K word 
    sectors.
    – At V
    IH
    , allows removal of sector protection
    – At V
    , provides accelerated programming in a factory setting
     Persistent Sector Protection
    – A command sector protection method to lock combinations of individual 
    sectors and sector groups to prevent program or erase operations within 
    that sector
    – Sectors can be locked and unlocked in-system at V
    CC
     level
     Password Sector Protection
    – A sophisticated sector protection method to lock combinations of 
    individual sectors and sector groups to prevent program or erase 
    operations within that sector using a user-defined 64-bit password
     Package options
    – Standard discrete pinouts
    11 x 8 mm, 80-ball Fine-pitch BGA (PL127J) (VBG080)
    8.15 x 6.15 mm, 48-ball Fine pitch BGA (PL064J/PL032J)
    (VBK048)
    – MCP-compatible pinout
    8 x 11.6 mm, 64-ball Fine-pitch BGA (PL127J)
    7 x 9 mm, 56-ball Fine-pitch BGA (PL064J and PL032J)
    Compatible with MCP pinout, allowing easy integration of RAM into 
    existing designs
    – 20 x 14 mm, 56-pin TSOP (PL127J) (TS056)
    S29PL-J
    128/128/64/32 Megabit (8/8/4/2 M x 16-Bit) 
    CMOS 3.0 Volt-only, Simultaneous-Read/Write
    Flash Memory with Enhanced VersatileIO Control
    Data Sheet
     (Advance Information)
    
    
    
    
    
    


    


    

    相關PDF資料
    		

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S29PL-J55TAI002
CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control

    

    
S29PL-J55TAI003
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S29PL-J55TAI010
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S29PL-J55TAI011
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S29PL-J55TAI012
CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control

    

    

    

    


    


    

    相關代理商/技術參數
    		

    參數描述
    		

    
    

    
S29PL-J55TAI002
 制造商:SPANSION 制造商全稱:SPANSION 功能描述:CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control

    

    
S29PL-J55TAI003
 制造商:SPANSION 制造商全稱:SPANSION 功能描述:CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control

    

    
S29PL-J55TAI010
 制造商:SPANSION 制造商全稱:SPANSION 功能描述:CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control

    

    
S29PL-J55TAI011
 制造商:SPANSION 制造商全稱:SPANSION 功能描述:CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control

    

    
S29PL-J55TAI012
 制造商:SPANSION 制造商全稱:SPANSION 功能描述:CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control

    

    
    
    
    
	
    	
    
    
     
     
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