參數資料
型號： S29NS256PABBJW003
廠商： SPANSION LLC
元件分類： DRAM
英文描述： MirrorBit Flash Family
中文描述： 16M X 16 FLASH 1.8V PROM, 80 ns, PBGA64
封裝： 6.20 X 7.70 MM , LEAD FREE, TFBGA-64
文件頁數： 45/86頁
文件大小： 2234K
代理商： S29NS256PABBJW003
February 20, 2007 S29NS-P_00_A1
S29NS-P MirrorBit
TM
Flash Family
45
D a t a
S h e e t
( A d v a n c e
I n f o r m a t i o n )
the bank address and the data 90h. The second cycle need only contain the data 00h. The bank then returns
to the read mode.
The device offers accelerated program operations through the V
PP
input. When the system asserts V
HH
on
this input, the device automatically enters the Unlock Bypass mode. The system may then write the two-cycle
Unlock Bypass program command sequence. The device uses the higher voltage on the V
PP
input to
accelerate the operation.
Refer to the
Erase/Program Timing
section for parameters, and
Figures
10.12
and
10.13
for timing diagrams
Software Functions and Sample Code
The following are C source code examples of using the unlock bypass entry, program, and exit functions.
Refer to the
Spansion Low Level Driver User’s Guide
(
www.spansion.com
) for general information on
Spansion Flash memory software development guidelines.
/* Example: Unlock Bypass Entry Command
*( (UINT16 *)bank_addr + 0x555 ) = 0x00AA;
*( (UINT16 *)bank_addr + 0x2AA ) = 0x0055;
*( (UINT16 *)bank_addr + 0x555 ) = 0x0020;
/* At this point, programming only takes two write cycles.
/* Once you enter Unlock Bypass Mode, do a series of like
/* operations (programming or sector erase) and then exit
/* Unlock Bypass Mode before beginning a different type of
/* operations.
*/
/* write unlock cycle 1
/* write unlock cycle 2
/* write unlock bypass command
*/
*/
*/
*/
*/
*/
*/
*/
/* Example: Unlock Bypass Program Command
/* Do while in Unlock Bypass Entry Mode!
*( (UINT16 *)bank_addr + 0x555 ) = 0x00A0;
*( (UINT16 *)pa )
/* Poll until done or error.
/* If done and more to program, */
/* do above two cycles again.
*/
*/
/* write program setup command
/* write data to be programmed
*/
*/
= data;
*/
*/
/* Example: Unlock Bypass Exit Command */
*( (UINT16 *)base_addr + 0x000 ) = 0x0090;
*( (UINT16 *)base_addr + 0x000 ) = 0x0000;
Table 6.23
Unlock Bypass Entry
(LLD Function = lld_UnlockBypassEntryCmd)
Cycle
Description
Operation
Byte Address
Word Address
Data
1
Unlock
Write
Base + AAAh
Base + 555h
00AAh
2
Unlock
Write
Base + 554h
Base + 2AAh
0055h
3
Entry Command
Write
Base + AAAh
Base + 555h
0020h
Table 6.24
Unlock Bypass Program
(LLD Function = lld_UnlockBypassProgramCmd)
Cycle
Description
Operation
Byte Address
Word Address
Data
1
Program Setup Command
Write
Base + xxxh
Base +xxxh
00A0h
2
Program Command
Write
Program Address
Program Address
Program Data
Table 6.25
Unlock Bypass Reset
(LLD Function = lld_UnlockBypassResetCmd)
Cycle
Description
Operation
Byte Address
Word Address
Data
1
Reset Cycle 1
Write
Base + xxxh
Base +xxxh
0090h
2
Reset Cycle 2
Write
Base + xxxh
Base +xxxh
0000h
相關PDF資料
PDF描述
S29NS512P MirrorBit Flash Family
S29NS512P0PBJW000 MirrorBit Flash Family
S29NS512P0PBJW003 MirrorBit Flash Family
S29NS512P0SBJW000 MirrorBit Flash Family
S29NS512P0SBJW003 MirrorBit Flash Family
相關代理商/技術參數
參數描述
S29NS512P 制造商:SPANSION 制造商全稱:SPANSION 功能描述:MirrorBit Flash Family
S29NS512P0PBJW000 功能描述:閃存 512M (32MX16) 66MHz Simultaneous R/W RoHS:否 制造商:ON Semiconductor 數據總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel
S29NS512P0PBJW003 制造商:SPANSION 制造商全稱:SPANSION 功能描述:MirrorBit Flash Family
S29NS512P0SBJW000 制造商:SPANSION 制造商全稱:SPANSION 功能描述:MirrorBit Flash Family
S29NS512P0SBJW003 制造商:SPANSION 制造商全稱:SPANSION 功能描述:MirrorBit Flash Family
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