參數資料
型號: S29NS064J0PBAW003
廠商: SPANSION LLC
元件分類: DRAM
英文描述: 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
中文描述: 4M X 16 FLASH 1.8V PROM, 65 ns, PBGA44
封裝: 9.20 X 8 MM, LEAD FREE, FBGA-44
文件頁數: 58/85頁
文件大?。?/td> 799K
代理商: S29NS064J0PBAW003
54
S29NS-J
S29NS-J_00_A10 March 22, 2006
D a t a S h e e t
AC Characteristics
V
CC
Power-up
Figure 9. V
CC
Power-up Diagram
Parameter
Description
Test Setup
Speed
Unit
t
VCS
V
CC
Setup Time
Min
50
μs
t
RSTH
RESET# Low Hold Time
Min
50
μs
V
CC
RE
S
ET#
t
VC
S
t
R
S
TH
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S29NS064J0PBFW00 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
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S29NS064J0PBFW002 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
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S29NS064J0PBFW00 制造商:SPANSION 制造商全稱:SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
S29NS064J0PBFW000 制造商:SPANSION 制造商全稱:SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
S29NS064J0PBFW002 制造商:SPANSION 制造商全稱:SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
S29NS064J0PBFW003 制造商:SPANSION 制造商全稱:SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
S29NS064J0PBJW00 制造商:SPANSION 制造商全稱:SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories