參數(shù)資料
型號: S29NS064J0PBAW002
廠商: SPANSION LLC
元件分類: DRAM
英文描述: 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
中文描述: 4M X 16 FLASH 1.8V PROM, 65 ns, PBGA44
封裝: 9.20 X 8 MM, LEAD FREE, FBGA-44
文件頁數(shù): 9/85頁
文件大?。?/td> 799K
代理商: S29NS064J0PBAW002
March 22, 2006 S29NS-J_00_A10
S29NS-J
5
D a t a S h e e t
Block Diagram of Simultaneous Operation Circuit
Notes:
1. A15–A0 are multiplexed with DQ15–DQ0.
2. Amax indicates the highest order address bit.
V
CC
V
SS
Acc
Bank B Address
RESET#
WE#
CE#
AVD#
CLK
DQ15–DQ0
STATE
CONTROL
&
COMMAND
REGISTER
Bank B
X-Decoder
Y
L
Bank A
X-Decoder
Y
L
DQ15–DQ0
DQ15–DQ0
DQ15–DQ0
DQ15–DQ0
DQ15–
DQ0
Bank C
Y
X-Decoder
L
Bank D
Y
X-Decoder
L
OE#
OE#
OE#
OE#
Status
Control
Amax–A0
Amax–A0
Amax–A0
Amax–A0
Amax–A0
Bank C Address
Bank D Address
Bank A Address
RDY
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S29NS064J0PBAW003 制造商:SPANSION 制造商全稱:SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
S29NS064J0PBFW00 制造商:SPANSION 制造商全稱:SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
S29NS064J0PBFW000 制造商:SPANSION 制造商全稱:SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
S29NS064J0PBFW002 制造商:SPANSION 制造商全稱:SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
S29NS064J0PBFW003 制造商:SPANSION 制造商全稱:SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories